Method of manufacturing semiconductor device

ABSTRACT

An object of the invention is to provide a method for manufacturing semiconductor devices that are flexible in which elements fabricated using a comparatively low-temperature (less than 500° C.) process are separated from a substrate. After a molybdenum film is formed over a glass substrate, a molybdenum oxide film is formed over the molybdenum film, a nonmetal inorganic film and an organic compound film are stacked over the molybdenum oxide film, and elements fabricated by a comparatively low-temperature (less than 500° C.) process are formed using existing manufacturing equipment for large glass substrates, the elements are separated from the glass substrate.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a continuation of U.S. application Ser. No.13/164,893, filed Jun. 21, 2011, now allowed, which is a continuation ofU.S. application Ser. No. 12/019,361, filed Jan. 24, 2008, now U.S. Pat.No. 7,968,382, which claims the benefit of a foreign priorityapplication filed in Japan as Serial No. 2007-023747 on Feb. 2, 2007,all of which are incorporated by reference.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to a method of manufacturing semiconductordevices including thin film transistors, light-emitting elements,passive elements, and the like. Furthermore, the present inventionrelates to electro-optical devices represented by liquid crystal displaypanels, light-emitting display devices that have light-emittingelements, and electronic devices in which IC tags, by which informationcan be transmitted and received wirelessly, are mounted as components.

It is to be noted that “semiconductor device” in the presentspecification refers to a general device that can function as asemiconductor device using semiconductor characteristics, andelectro-optical devices, light-emitting devices, semiconductor circuits,IC tags, and electronic devices can all be considered semiconductordevices.

2. Description of the Related Art

In recent years, technology that is used to form thin film transistorsusing semiconductor thin films (with thicknesses of from severalnanometers to several hundreds of nanometers, approximately) that areformed over substrates that have an insulating surface has beenattracting attention. Thin film transistors are applied to a wide rangeof electronic devices like ICs and electro-optical devices, and promptdevelopment of thin film transistors that are to be used as switchingelements in image display devices, in particular, is being pushed.

With applications that use these kinds of image display devices, avariety of things are being expected, and use in portable devices, inparticular, is attracting attention. Glass substrates and quartzsubstrates are often used in image display devices; however, there aredisadvantages to using glass substrates and quartz substrates in thatthey are easily breakable as well as heavy. Furthermore, increasing thesize of glass substrates and quartz substrates, such as for massproduction, is difficult, and glass substrates and quartz substrates arethus not suitable for mass production. For these reasons, forming thinfilm transistors over flexible substrates, typically, flexible plasticfilms, is being attempted.

Thus, technology in which semiconductor elements, including thin filmtransistors, that are formed over glass substrates are separated fromthe glass substrates and transferred to other substrates, for example,to plastic films or the like, has been proposed.

The present applicant proposed the separation and transfer techniquethat is disclosed in Patent Reference Document 1 and Patent ReferenceDocument 2. In Patent Reference Document 1, a separation technique bywhich a silicon oxide film that is to be used as a peeling layer isremoved by wet etching is disclosed. In addition, in Patent ReferenceDocument 2, a separation technique by which a silicon film that is to beused as a peeling layer is removed by dry etching is disclosed.

Furthermore, the present applicant proposed the separation and transfertechnique that is disclosed in Patent Reference Document 3. In PatentReference Document 3, a technique where a metal (Ti, Al, Ta, W, Mo, Cu,Cr, Nd, Fe, Ni, Co, Ru, Rh, Pd, Os, or Ir) layer is formed over asubstrate, an oxide layer is formed and stacked thereover, a metal oxidelayer of the metal layer is formed in the interface between the metallayer and the oxide layer, and separation from the substrate isperformed during a subsequent step using this metal oxide layer isdisclosed.

-   Patent Reference Document 1: Japanese Published Patent Application    No. H8-288522-   Patent Reference Document 2: Japanese Published Patent Application    No. H8-250745-   Patent Reference Document 3: Japanese Published Patent Application    No. 2003-174153

SUMMARY OF THE INVENTION

In the present invention, a separation and transfer technique by whichelements, typically, thin film transistors formed using amorphoussemiconductor films, crystalline semiconductor films that are formed bylaser crystallization, or the like; thin film transistors formed usingorganic semiconductor films; light-emitting elements; passive elements(sensor elements, antennas, resistive elements, capacitive elements, andthe like); and the like, which are fabricated by a comparativelylow-temperature (temperature of less than 500° C.) process, areseparated from glass substrates and transferred to flexible substrates(typically, plastic films) is disclosed.

The thin film transistors formed using amorphous semiconductor films orthe like and the thin film transistors formed using organicsemiconductor films can be directly formed over the plastic films;however, because plastic films are soft and curl up easily, there is aneed to set the manufacturing equipment to be manufacturing equipmentthat is used to handle plastic films exclusively.

Furthermore, when thin film transistors formed using amorphoussemiconductor films or the like and thin film transistors formed usingorganic semiconductor films are directly formed over plastic films,there is a risk that the plastic films will be exposed to solvents oretching gases that are used in the course of the thin film transistorfabrication process and that the quality of the plastic films themselveswill change because of this exposure. In addition, when thin filmtransistors formed using ZnO are directly formed over plastic films, ifthe plastic films are irradiated by plasmas that are generated by asputtering method or the like, the plastic films themselves will becomedeformed. Moreover, there is a possibility that moisture or the likewill be absorbed into the plastic films in the course of the thin filmtransistor fabrication process or that the elements will be contaminatedby emission. Additionally, because heat resistance is lower and thedegree of heat-induced expansion and contraction higher for plasticfilms than for glass substrates, carefully controlling the processtemperature of each step of the fabrication process is difficult.

Moreover, when mass production of semiconductor devices formed usingplastic films is carried out, it is often the case that manufacturingequipment is supplied with a roll-to-roll method. However, with aroll-to-roll method, existing semiconductor manufacturing equipmentcannot be used. In addition, the level of accuracy for alignment is low,and microfabrication is difficult. As a result, fabrication ofsemiconductor devices, in which characteristics equivalent to those ofconventional semiconductor devices formed using glass substrates areobtained, at high yield is difficult.

An object of the present invention is the provision of a manufacturingmethod for semiconductor devices that are thin and that have elements,typically, thin film transistors formed using amorphous semiconductorfilms or the like; thin film transistors formed using crystallinesemiconductor films crystallized by laser crystallization; thin filmtransistors formed using organic semiconductor films; light-emittingelements; passive elements (sensor elements, antennas, resistiveelements, capacitive elements, and the like); and the like, that arefabricated at a comparatively low temperature, typically, a temperaturethat can be withstood by an organic compound. Furthermore, anotherobject of the present invention is the provision of a manufacturingmethod for semiconductor devices that are flexible.

In accordance with a feature of the present invention, a method ofmanufacturing a semiconductor device comprises the steps of forming ametal film (preferably, a molybdenum film) over a substrate, forming ametal oxide film (preferably, a molybdenum oxide film) over the metalfilm, forming a nonmetal inorganic film over the metal oxide film,forming an organic compound film over the nonmetal inorganic film,forming a semiconductor element over the organic compound film, andseparating the semiconductor element from the substrate. The metal oxidefilm may be an oxide film of a same metal as a metal of the metal film.In accordance with another feature of the present invention, a method ofmanufacturing a semiconductor device comprises the steps of forming ametal film (preferably, a molybdenum film) over a substrate, forming ametal oxide film (preferably, a molybdenum oxide film) over the metalfilm, forming a nonmetal inorganic film over the metal oxide film,forming an organic compound film over the nonmetal inorganic film,forming a conductive layer over the organic compound film, andseparating the conductive layer from the substrate. The metal oxide filmmay be an oxide film of a same metal as a metal of the metal film. Inaccordance with still another feature of the present invention, elementsare separated from a glass substrate after completion of steps in whicha molybdenum film (Mo film) is formed over a glass substrate and amolybdenum oxide film is formed over the molybdenum film; a nonmetalinorganic film and an organic compound film are stacked over themolybdenum oxide film; elements (typically, thin film transistors formedusing amorphous semiconductor films, crystalline semiconductor filmsthat are formed by laser crystallization, or the like; thin filmtransistors formed using organic semiconductor films; light-emittingelements; passive elements (sensor elements, antennas, resistiveelements, capacitive elements, and the like); and the like) fabricatedby a process at a comparatively low temperature, typically, atemperature that can be withstood by the organic compound film, areformed over the organic compound film. There is a disadvantage withusing molybdenum in that the heat resistance of molybdenum is lowcompared to that of tungsten. For example, because separation occurswith molybdenum films if heat treatment at a temperature of 500° C. ormore is performed thereon, it is preferable that the temperature of thefabrication process involving molybdenum films be set to less than 500°C. Molybdenum oxide films are also brittle. In the present invention,separation of elements from a substrate is performed in the vicinity ofa molybdenum oxide film that has this brittleness. Typically, by astacked-layer structure of a molybdenum film, a molybdenum oxide film,and a nonmetal inorganic film, separation of elements from a substratecan be performed in the vicinity of the molybdenum oxide film that hasbrittleness, and separation of elements from a substrate can beperformed at high yield even if comparatively large substrates are used.

In addition, in separating elements (light-emitting elements, organicthin film transistors, and the like), each containing an organiccompound, that are formed over a molybdenum oxide film that is providedover a glass substrate from the glass substrate, because theadhesiveness of an organic compound layer contained in each of thelight-emitting elements, organic thin film transistors, and the like isweak, separation of the elements from the glass substrate occurs not inthe vicinity of a metal layer but within the organic compound layer orat an interface of the organic compound layer, and there is apossibility of the elements that each contain an organic compoundbreaking. Furthermore, because the adhesiveness of a material layerformed by a printing method is weak, there is a possibility thatseparation of the elements from the glass substrate will occur, as withthe above, either within the material layer or at an interface of thematerial layer. However, if the separation method of the presentinvention that uses a molybdenum oxide film is used, because amolybdenum oxide film is brittle, separation of elements from asubstrate can be performed with relatively little force. Moreover,because there is no need, in particular, for heat treatment on orirradiation by laser beam of the entire substrate in order to separatethe elements from the substrate, the process is simplified.

Furthermore, molybdenum has advantages over other metal elements in thatvapor pressure is low and there is little emission of gases.Consequently, contamination of elements that are formed over amolybdenum film can be suppressed to a minimal amount.

It is to be noted that the molybdenum film is to be formed over a glasssubstrate; however, the substrate that is used is not limited to being aglass substrate, and a quartz substrate, a ceramic substrate, asemiconductor substrate, or the like can be used, as well. Furthermore,the molybdenum oxide film is to be formed over the molybdenum film;however, the molybdenum oxide film may be formed in contact with themolybdenum film.

In the present invention, after elements, such as thin film transistorsand the like, are formed using existing manufacturing equipment forlarge glass substrates, the elements are separated from the glasssubstrate over which they are formed. Consequently, because existingmanufacturing equipment is used, equipment costs can be significantlyreduced.

In addition, by formation of an organic compound film at a thickness of5 μm or more, preferably, at a thickness of greater than or equal to 10μm and less than or equal to 100 μm, between a nonmetal inorganic film,which comes into contact with a molybdenum oxide film, and asemiconductor element, the organic compound film can be made to functionas a support of a semiconductor device that is formed after the organiccompound film is formed. Moreover, by heat treatment performed duringfabrication of the organic compound film, separation of elements fromthe substrate, which is to be performed during a subsequent step, in thevicinity of the molybdenum oxide film becomes easy to do.

One configuration of the invention disclosed in the presentspecification is that of a manufacturing method by which semiconductorelements are formed over a flexible substrate, where, after a molybdenumfilm is formed over a substrate, a molybdenum oxide film is formed overthe molybdenum film, a nonmetal inorganic film is formed over themolybdenum oxide film, an organic compound film is formed over thenonmetal inorganic film, an amorphous semiconductor film is formed overthe organic compound film, and semiconductor elements are formed usingthe amorphous semiconductor film, a stacked-layer body that includes thenonmetal inorganic film, the organic compound film, and thesemiconductor elements is separated from the substrate.

The present invention is an invention in which, after semiconductorelements, which are not formed of material layers that are stacked inorder over a flexible substrate but are formed using an amorphoussilicon film that is formed over a glass substrate, a ceramic substrate,or a quartz substrate, are formed, the semiconductor elements areseparated from the glass substrate, ceramic substrate, or quartzsubstrate over which they are formed. It is to be noted that thesemiconductor elements may be separated from the substrate after beingaffixed to a flexible substrate that is on a side opposite from thesubstrate with the semiconductor elements interposed between theflexible substrate and the substrate. Furthermore, elements may beinterposed between and affixed to two flexible substrates, as well.

In addition, another configuration of the invention disclosed in thepresent specification is that of a manufacturing method by whichelements such as organic thin film transistors are formed over aflexible substrate, where, after a molybdenum film is formed over asubstrate, a molybdenum oxide film is formed over the molybdenum film, anonmetal inorganic film is formed over the molybdenum oxide film, anorganic compound film is formed over the nonmetal inorganic film, ansemiconductor film that contains an organic compound is formed over theorganic compound film, and semiconductor elements are formed using thesemiconductor film that contains an organic compound, a stacked-layerbody that includes the nonmetal inorganic film, the organic compoundfilm, and the semiconductor elements is separated from the substrate.

Furthermore, another configuration of the invention disclosed in thepresent specification is that of a manufacturing method by whichlight-emitting elements such as organic light-emitting elements,inorganic light-emitting elements, and the like are formed over aflexible substrate, where, after a molybdenum film is formed over asubstrate, a molybdenum oxide film is formed over the molybdenum film, anonmetal inorganic film is formed over the molybdenum oxide film, anorganic compound film is formed over the nonmetal inorganic film, afirst electrode is formed over the organic compound film, alight-emitting layer that contains an organic compound or an inorganiccompound is formed over the first electrode, a second electrode isformed over the light-emitting layer, and a flexible substrate isattached to the second electrode, a stacked-layer body that includes thenonmetal inorganic film, the organic compound film, the first electrode,the light-emitting layer, and the second electrode is separated from thesubstrate.

Yet another configuration of the invention disclosed in the presentspecification is that of a manufacturing method by which passiveelements such as antennas and the like are formed over a flexiblesubstrate, where, after a molybdenum film is formed over a substrate, amolybdenum oxide film is formed over the molybdenum film, a nonmetalinorganic film is formed over the molybdenum oxide film, an organiccompound film is formed over the nonmetal inorganic film, a conductivelayer is printed over the organic compound film by a printing method,the conductive layer is baked, and the conductive layer andsemiconductor components are attached to each other, the nonmetalinorganic film, the organic compound film, the conductive film, and thesemiconductor components are separated from the substrate.

Yet another configuration of the invention disclosed in the presentspecification is one in which, after a molybdenum film is formed over asubstrate; a molybdenum oxide film is formed over the molybdenum film; anonmetal inorganic film is formed over the molybdenum oxide film; anorganic compound film is formed over the nonmetal inorganic film; aconductive layer is printed over the organic compound film by a printingmethod; the conductive layer is baked; and a stacked-layer body thatincludes the nonmetal inorganic film, the organic compound film, and theconductive layer are separated from the substrate, semiconductorcomponents are connected to the conductive layer.

Furthermore, in each of the above configurations, a pretreatment stepmay be performed in order to facilitate the separation of elements froma substrate, and it is preferable that, for example, a part of thesubstrate be irradiated with a laser beam before the elements areseparated from the substrate. Specifically, irradiation with arelatively weak laser beam (the irradiation energy of the laser sourceis from 1 mJ to 2 mJ) may be performed using a solid-state laser (apulse-excitation Q-switched Nd:YAG laser) using the second harmonic(wavelength of 532 nm) or third harmonic (wavelength of 355 nm) of afundamental wave. In addition, a notch may be inserted at the placewhere separation is to be performed by use of a sharp object, as well.

Moreover, in relation to thin film transistors, the present inventioncan be applied to any thin film transistor regardless of elementstructure, and, for example, top-gate thin film transistors, bottom-gate(inverted-staggered) thin film transistors, and staggered thin filmtransistors can be used. In addition, the transistors used are notlimited to being transistors that have a single-gate structure but maybe set to be multi-gate transistors that have a plurality of channelformation regions, for example, double-gate transistors.

Furthermore, by the present invention, display devices that areflexible, thin, and large can be manufactured, and these display devicesare not limited to being passive matrix liquid crystal display devicesor passive matrix light-emitting devices; active matrix liquid crystaldisplay devices and active matrix light-emitting devices can bemanufactured, as well.

It is to be noted that, in the present specification, “molybdenum film”refers to a film whose main component is molybdenum, and there are noparticular limitations on the molybdenum film as long as it is one inwhich the percent composition of molybdenum is 50% or more, and themolybdenum film may be doped with Co, Sn, or the like to increase themechanical strength of the film. Furthermore, the film may be made tocontain nitrogen in order to reduce its brittleness.

Additionally, “flexible substrate” refers to a plastic substrate that isformed as a film, for example, a plastic substrate made frompolyethylene terephthalate (PET), polyethersulfone (PES), polyethylenenaphthalate (PEN), polycarbonate (PC), nylon, polyetheretherketone(PEEK), polysulfone (PSU), polyetherimide (PEI), polyarylate (PAR),polybutylene terephthalate (PBT), or the like.

By the present invention, a separation process can be performedsmoothly, even if a substrate with a large area, where the length of thediagonal of the substrate exceeds 1 meter, is used. In addition, byprovision of an organic compound film between a molybdenum oxide filmand semiconductor elements, the organic compound film can be made tofunction as a support for the semiconductor device. For this reason, asupport substrate used to support the semiconductor device need not beformed unnecessarily, and costs can be reduced.

BRIEF DESCRIPTION OF THE DRAWINGS

FIGS. 1A to 1E are cross-sectional-view diagrams used to describe amanufacturing method for a semiconductor device of the presentinvention.

FIGS. 2A to 2D are cross-sectional-view diagrams used to describe amanufacturing method for a semiconductor device of the presentinvention.

FIGS. 3A to 3D are cross-sectional-view diagrams used to describe amanufacturing method for a semiconductor device of the presentinvention.

FIGS. 4A to 4D are cross-sectional-view diagrams used to describe amanufacturing method for a semiconductor device of the presentinvention.

FIG. 5A is a top-view diagram and FIGS. 5B and 5C arecross-sectional-view diagrams, each used to describe a structure of asemiconductor device of the present invention.

FIG. 6 is a perspective-view diagram used to describe a structure of asemiconductor device of the present invention.

FIG. 7 is a top-view diagram used to describe a structure of asemiconductor device of the present invention.

FIGS. 8A and 8B are top-view diagrams used to describe a structure of asemiconductor device of the present invention.

FIG. 9 is a cross-sectional-view diagram used to describe a structure ofa semiconductor device of the present invention.

FIGS. 10A to 10C are cross-sectional-view diagrams and FIG. 10D is aperspective-view diagram that are used to describe a manufacturingmethod for a semiconductor device of the present invention.

FIGS. 11A to 11D are top-view diagrams used to describe shapes ofantennas that can be applied to the present invention.

FIG. 12A is a diagram used to describe a structure of a semiconductordevice of the present invention, and FIG. 12B is a diagram used todescribe an example of an electronic device.

FIGS. 13A to 13G are diagrams each used to describe an application of asemiconductor device of the present invention.

FIGS. 14A to 14C are diagrams, each illustrating an example of anelectronic device.

FIGS. 15A and 15B are diagrams, each illustrating an example of thestructure of a cross section of an organic thin film transistor.

FIGS. 16A to 16F are cross-sectional-view diagrams used to describe amanufacturing method for a semiconductor device of the presentinvention.

FIGS. 17A and 17B are diagrams, each used to describe current-voltagecharacteristics of a thin film transistor that was fabricated using thepresent invention.

DETAILED DESCRIPTION OF THE INVENTION

Hereinafter, Embodiment Modes of the present invention will be describedbased on diagrams. However, the present invention can be implemented ina lot of different modes, and it is to be easily understood by thoseskilled in the art that various changes and modifications can be madewithout any departure from the spirit and scope of the presentinvention. Accordingly, the present invention is not to be taken asbeing limited to the described content of the embodiment modes includedherein. It is to be noted that identical portions or portions havingsimilar functions in all figures used to describe embodiment modes aredenoted by the same reference numerals, and repetitive descriptionthereof is omitted.

Embodiment Mode 1

Here, an example in which a liquid crystal display device is fabricatedwill be described using FIGS. 1A to 1E.

A molybdenum film 101 is formed over a substrate 100. A glass substrateis used for the substrate 100. Furthermore, for the molybdenum film 101,a molybdenum film with a thickness of from 30 nm to 200 nm obtained by asputtering method is used. It is to be noted that, because there arecases where the substrate is locked in place in a sputtering method, thefilm thickness of the molybdenum film in the vicinity of the edges ofthe substrate easily becomes uneven. For this reason, it is preferablethat the edges of the molybdenum film be removed by dry etching.

Next, a molybdenum oxide film 102 is formed over the molybdenum film101. The molybdenum oxide film 102 can be formed by an evaporationmethod. Alternatively, the molybdenum oxide film 102 may be formed incontact with the molybdenum film 101; the surface of the molybdenum film101 may be oxidized, and the molybdenum oxide film 102 may be formedthereby. For a formation method for the molybdenum oxide film 102, themolybdenum oxide film 102 may be formed by oxidation of the surface ofthe molybdenum film 101 using pure water or ozone water or by oxidationby oxygen plasma or dinitrogen oxide plasma. Furthermore, the molybdenumoxide film 102 may be formed by application of heat in an atmospherethat contains oxygen.

Next, a nonmetal inorganic film 103 is formed over the molybdenum oxidefilm 102. The nonmetal inorganic film 103 is a film that is formed of aninorganic compound or a simple substance other than an elemental metal.For inorganic compounds, there are metal oxides, metal nitrides, metaloxynitrides, and the like. Typically, there is silicon nitride oxide,aluminum oxide, aluminum nitride, aluminum oxynitride, aluminum nitrideoxide, silicon-germanium, carbon nitride, ITO, tin oxide, and the like;however, inorganic compounds are not limited to only these. Furthermore,for a simple substance other than an elemental metal, typically, thereis silicon, germanium, carbon, and the like. Typically, there isamorphous silicon, amorphous germanium, diamond-like carbon (DLC), andthe like; however, simple substances other than elemental metalsubstances are not limited to only these. The nonmetal inorganic film103 can be formed by a CVD method, a sputtering method, an evaporationmethod, or the like.

It is to be noted that when the nonmetal inorganic film 103 is formed bya sputtering method or by a CVD method, the nonmetal inorganic film 103may be formed such that, after one source gas (for example, dinitrogenoxide or oxygen) is introduced into a reaction chamber, a plasma isgenerated, and the molybdenum oxide film 102 is formed on the surface ofthe molybdenum film 101, other source gases are fed into the reactionchamber, and the nonmetal inorganic film 103 is formed.

Next, an organic compound film 104 is formed over the nonmetal inorganicfilm 103. It is preferable that the organic compound film 104 be formedof a material that has a high enough upper temperature limit towithstand a process temperature (greater than or equal to 180° C. andless than or equal to 500° C., preferably, greater than or equal to 200°C. and less than or equal to 400° C., even more preferably, greater thanor equal to 250° C. and less than or equal to 350° C.) of a process thatis to be performed during a subsequent step. Furthermore, it ispreferable that the organic compound film 104 be formed of an elasticmaterial that is resistant to bending and in which cracks do not readilyform. In addition, it is preferable that the organic compound film 104be formed of a material that transmits light. With the organic compoundfilm 104 being able to transmit light, a transmissive liquid crystaldisplay device can be fabricated. By formation of the organic compoundfilm 104 at a thickness of 5 μm or more, preferably, at a thickness ofgreater than or equal to 10 μm and less than or equal to 100 μm, theorganic compound film 104 can be made to function as a support for asemiconductor device that is to be formed in a subsequent step. For thisreason, a support substrate used to support the semiconductor deviceneed not be formed unnecessarily. In a fabrication method for theorganic compound film 104, a composition is applied to the nonmetalinorganic film 103, and the nonmetal inorganic film 103 that is coatedwith the composition is baked at a temperature of greater than or equalto 180° C. and less than 500° C., preferably, at a temperature ofgreater than or equal to 200° C. and less than or equal to 400° C., andeven more preferably, at a temperature of greater than or equal to 250°C. and less than or equal to 350° C. By heat treatment during afabrication process of the organic compound film 104, the molybdenumoxide can be weakened, and separation in the vicinity of the molybdenumfilm 101 that is to be performed in a subsequent step becomes easy todo. For representative examples of the organic compound film 104, thereis polyimide, polybenzoxazole, silicone, and the like. A cross-sectionalprocess diagram of what is obtained after processes up to this stagehave been completed is shown in FIG. 1A.

Next, an inorganic insulating film 105 may be formed over the organiccompound film 104. The inorganic insulating film 105 functions as a baseinsulating film used to suppress diffusion of impurities from a glasssubstrate or an organic compound into a semiconductor film that is to beformed in a subsequent step and is formed as needed. The inorganicinsulating film 105 can be formed of silicon nitride oxide, aluminumoxide, aluminum nitride, aluminum oxynitride, aluminum nitride oxide, orthe like. For a typical example of a film that functions as a baseinsulating film, the inorganic insulating film 105 is made from atwo-layer structure in which a silicon nitride oxide film formed at athickness of from 50 nm to 100 nm by a plasma CVD (PCVD) method withSiH₄, NH₃, and N₂O used as reactive gases and a silicon oxynitride filmformed at a thickness of from 100 nm to 150 nm with SiH₄ and N₂O used asreactive gases. Furthermore, for the inorganic insulating film 105, athree-layer structure of a silicon nitride oxide film, a siliconoxynitride film, and a silicon nitride film, stacked in the order given,may be used, as well.

Next, a first conductive film is formed over the inorganic insulatingfilm 105, and a mask is formed over the first conductive film. The firstconductive film is formed of a single layer of an element selected fromTa, W, Ti, Al, Cu, Cr, Nd, or the like or an alloy material or compoundmaterial with one of these elements as the main component or formed ofstacked layers of any of these. In addition, for a formation method ofthe first conductive film, a sputtering method, an evaporation method, aCVD method, a coating method, or the like is used, as appropriate. Next,the first conductive film is etched using the mask, and a gate electrode106 is formed.

Subsequently, a gate insulating film 107 is formed over the gateelectrode 106. For the gate insulating film 107, an insulating film,such as a silicon nitride film, a silicon oxide film, a siliconoxynitride film, or the like, is used. Alternatively, a film obtained byapplication and baking of a composition that contains a siloxanepolymer, a light-curable organic resin film, a heat-curable organicresin film, or the like may be used, as well.

Next, an amorphous semiconductor film 108 is formed over the gateinsulating film 107. The amorphous semiconductor film 108 is formed ofan amorphous semiconductor film or a microcrystal semiconductor filmfabricated by a vapor-phase epitaxy method using a semiconductormaterial gas typified by silane or germanium, a sputtering method, or athermal CVD method. In the present embodiment mode, for a semiconductorfilm, an example using an amorphous semiconductor film is given.Furthermore, for the semiconductor film, ZnO or an oxide ofzinc-gallium-indium fabricated by a sputtering method or a pulsed laserdeposition (PLD) method may be used; however, in this case, it ispreferable that the gate insulating film be formed of an oxide thatcontains aluminum or titanium.

Subsequently, for a semiconductor film 109 that contains an impurityelement of one conductivity type, a semiconductor film that contains animpurity element imparting n-type conductivity is formed at a thicknessof from 20 nm to 80 nm. The semiconductor film that contains an impurityelement imparting n-type conductivity is formed over the entire surfaceby a publicly disclosed method such as a publicly disclosed plasma CVDmethod, sputtering method, or the like. A cross-sectional processdiagram of what is obtained after processes up to this stage have beencompleted is shown in FIG. 1B.

Subsequently, the amorphous semiconductor film 108 and the semiconductorfilm 109 that contains an impurity element imparting n-type conductivityare etched using a mask that is formed using a publicly disclosedphotolithography technique, and an island-shaped amorphous semiconductorlayer and a semiconductor layer that contains an impurity element of oneconductivity type are obtained. It is to be noted that the amorphoussemiconductor film 108 and the semiconductor film 109 that contains animpurity element imparting n-type conductivity may be etched as selectedusing a mask formed using a liquid droplet discharge method or aprinting method (a relief printing method, a planographic printingmethod, an intaglio printing method, a screen printing method, or thelike) instead of the publicly disclosed photolithography method.

Next, a composition that contains a conductive material (silver (Ag),gold (Au), copper (Cu), tungsten (W), aluminum (Al), or the like) isdischarged as selected by a liquid droplet discharge method, and asource electrode and a drain electrode 112 and 113 are formed. It is tobe noted that, instead of being formed by a liquid droplet dischargemethod, the source electrode and the drain electrode 112 and 113 mayalso be formed by formation of a metal (Ta, W, Ti, Al, Cu, Cr, Nd, orthe like) film by a sputtering method and then etching of the metal filmusing a mask that is formed by a publicly disclosed photolithographytechnique.

Next, semiconductor layers 114 and 115 that each contain an impurityelement of one conductivity type are formed by etching of thesemiconductor layer that contains an impurity element of oneconductivity type using the source electrode and drain electrode 112 and113 as masks. In addition, an upper part of the island-shaped amorphoussemiconductor layer is etched using the source electrode and drainelectrode 112 and 113 as masks, and an island-shaped amorphoussemiconductor layer 116 is formed. An exposed portion of theisland-shaped amorphous semiconductor layer 116 is a place thatfunctions as a channel formation region of a thin film transistor.

Subsequently, a protective film 117 is formed in order to preventcontamination of the channel formation region of the island-shapedamorphous semiconductor film 116 with impurities. For the protectivefilm 117, silicon nitride obtained by a sputtering method or a PCVDmethod or a material that contains silicon nitride oxide as its maincomponent is used. Hydrogenation treatment may be performed. In thisway, a thin film transistor 111 is fabricated.

Next, an interlayer insulating film 118 is formed over the protectivefilm 117. Furthermore, the interlayer insulating film 118 is formedusing a resinous material such as an epoxy resin, an acrylic resin, aphenolic resin, a novolac resin, a melamine resin, a urethane resin, orthe like. In addition, an organic material, such as benzocyclobutane,parylene, polyimide that can transmit light, or the like, or the likecan be used, as well. Furthermore, for the interlayer insulating film118, an insulating film, such as a silicon oxide film, a silicon nitridefilm, a silicon oxynitride film, or the like, can be used, or stackedlayers of any of these insulating films and the above-mentioned resinmaterials may be used, as well.

Next, the protective film 117 and the interlayer insulating film 118 areremoved as selected using a mask formed using a publicly disclosedphotolithography technique, and a contact hole that reaches through tothe source electrode or drain electrode 112 is formed.

Next, a composition that contains a conductive material (silver (Ag),gold (Au), copper (Cu), tungsten (W), aluminum (Al), or the like) isdischarged as selected by a liquid droplet discharge method, and a firstelectrode 119 that is electrically connected to the source electrode ordrain electrode 112 is formed. Furthermore, a second electrode 120,which, along with the first electrode 119, forms an electric field in adirection parallel to the surface of the substrate, is formed by theliquid droplet discharge method. It is to be noted that it is preferablethat the first electrode 119 and the second electrode 120 be arranged atan equal distance from each other, and the shape of the upper surface ofeach of the electrodes may be formed as a comb-like shape. It is to benoted that the first electrode 119 and the second electrode 120 eachfunction as a pixel electrode of a liquid crystal display device.

Next, an orientation film 121 used to cover the first electrode 119 andthe second electrode 120 is formed. A cross-sectional process diagram ofwhat is obtained after processes up to this stage have been completed isshown in FIG. 1C.

Next, a flexible substrate 133 is affixed using a liquid crystalmaterial, here, a polymer-dispersed liquid crystal, so as to be oppositethe substrate 100. Polymer-dispersed liquid crystals are divided intotwo types depending on the dispersion state of the liquid crystal andpolymer material. The first type is a type in which droplets of a liquidcrystal are dispersed throughout a polymer material, where the liquidcrystal is discontinuous (referred to as PDLC); the other type is a typein which the polymer material forms a network in the liquid crystal,where the liquid crystal is continuous (referred to as PNLC). It is tobe noted that, in the present embodiment mode, either type may be used,but a PDLC is used here. In the present embodiment mode, a polymermaterial 131 that contains a liquid crystal 132 is used to affix theflexible substrate 133. If necessary, a sealing material may be providedso as to surround the polymer material 131. Furthermore, if necessary, aspacer material (a bead spacer, a columnar spacer, a fiber, or the like)may be used to control the thickness of the polymer material 131.Moreover, a publicly disclosed liquid crystal material may be usedinstead of the polymer-dispersed liquid crystal.

Subsequently, a stacked-layer body 134 that includes the nonmetalinorganic film 103, the organic compound film 104, the thin filmtransistor 111, and the flexible substrate 133 is separated from thesubstrate 100. Because the molybdenum oxide film is brittle, separationcan be performed with relatively little force. In FIG. 1D, a diagram isshown in which the stacked-layer body 134 is separated from thesubstrate 100 at the interface between the molybdenum oxide film 102 andthe nonmetal inorganic film 103; however, there are no limitations, inparticular, on the place where the stacked-layer body 134 is separatedfrom the substrate 100 as long as the stacked-layer body 134 isseparated from the substrate 100 in a region where the thin filmtransistor receives no damage and somewhere between the nonmetalinorganic film 103 and the substrate 100. For example, the stacked-layerbody 134 may be separated from the substrate 100 at a place within themolybdenum film or within the molybdenum oxide film, or thestacked-layer body 134 may be separated from the substrate 100 at aninterface between the substrate and the molybdenum film or at aninterface between the molybdenum film and the molybdenum oxide film.However, in the case in which a transmissive liquid crystal displaydevice is fabricated, when the stacked-layer body 134 is separated fromthe substrate 100 at an interface between the substrate and themolybdenum film and the molybdenum film is left remaining over thenonmetal inorganic film 103, it is preferable that the molybdenum filmbe removed during a subsequent step. In addition, the nonmetal inorganicfilm 103 may be removed, as well, as necessary.

It is to be noted that, when a plurality of liquid crystal displaydevices is included in a stacked-layer body that includes the organiccompound film 104, the thin film transistor 111, and the flexiblesubstrate 133, the stacked-layer body may be divided up and theplurality of liquid crystal display devices cut apart. By this kind ofstep, a plurality of liquid crystal display devices can be fabricated bya single separation step.

By the above steps, as shown in FIG. 1E, an active matrix liquid crystaldisplay device 135 that uses amorphous silicon thin film transistors canbe fabricated. The adhesiveness of a conductive film formed by a liquiddroplet discharge method is weak; however, when the separation method ofthe present invention that uses a molybdenum film is used, even if aconductive layer formed by a liquid droplet discharge method is used inone part of a wiring, separation can be done in the vicinity of themolybdenum oxide film (at an interface between the molybdenum oxide film102 and the nonmetal inorganic film 103 in the present embodiment mode).The liquid crystal display device of the present embodiment mode is thinand has flexibility. In addition, by provision of an organic compoundfilm between the molybdenum oxide film and the thin film transistor, theorganic compound film can be made to function as a support of the liquidcrystal display device. For this reason, a support substrate used tosupport the liquid crystal display device need not be formedunnecessarily, and costs can be reduced.

It is to be noted that if the mechanical strength of the liquid crystaldisplay device is low, a flexible substrate may be affixed to thesurface at which separation is performed using an adhesive layer. Inthis case, in order to preserve the width of a space between substratesdespite changes in temperature, it is preferable that a flexiblesubstrate with the same coefficient of thermal expansion as the flexiblesubstrate 133 be used.

Furthermore, an electrophoretic display may be fabricated, as well,using electronic ink instead of a polymer-dispersed liquid crystal. Inthis case, after the first electrode 119 and the second electrode 120are formed, electronic ink may be applied by a printing method and thenbaked and affixed by the flexible substrate 133. Then, sealing may beperformed using another flexible substrate after separation from thesubstrate is performed.

Embodiment Mode 2

Here, an example in which an active matrix light-emitting device thatuses organic thin film transistors is fabricated will be described usingFIGS. 2A to 2D.

As in Embodiment Mode 1, the molybdenum film 101 is formed over thesubstrate 100, the molybdenum oxide film 102 is formed over themolybdenum film 101, the nonmetal inorganic film 103 is formed over themolybdenum oxide film 102, and the organic compound film 104 is formedover the nonmetal inorganic film 103. A cross-sectional process diagramof what is obtained after processes up to this stage have been completedis shown in FIG. 2A.

Next, the inorganic insulating film 105 may be formed over the organiccompound film 104. Subsequently, a conductive layer 211 that is to beused as a gate electrode is formed over the organic compound film 104 orover the inorganic insulating film 105. For a material used in theconductive layer 211, a metal that is made to be insulative by eithernitridation or oxidation or by both nitridation and oxidation should beused, and, in particular, tantalum, niobium, aluminum, copper, andtitanium are preferable. In addition to these elements, there is alsotungsten, chromium, nickel, cobalt, magnesium, and the like. There areno particular limitations on the type of formation method used to formthe conductive layer 211; the conductive layer 211 may be formed by amethod in which, after a conductive film is formed by a sputteringmethod, an evaporation method, or the like, the conductive film isprocessed into a desired shape by a method such as etching or the like.In addition, the conductive layer 211 may also be formed by an inkjetprinting method or the like using droplets that contain a conductivematerial.

Next, a gate insulating film 212 made from an oxide, a nitride, or anoxynitride of one of the above metals by either nitridation or oxidationor by both nitridation and oxidation of the conductive layer 211 isformed. It is to be noted that a part of the conductive layer 211 otherthan the gate insulating film 212, which is made to be insulative,function as a gate electrode.

Subsequently, a semiconductor layer 213 is formed to cover the gateinsulating film 212. For an organic semiconductor material used to formthe semiconductor layer 213, either a material with a low molecularweight or a material with a high molecular weight can be used, as longas it is an organic material that has carrier transportability and onein which changes in the carrier density due to electric field effectsare possible; there are no particular limitations on the type ofmaterial used, and polycyclic aromatic compounds, conjugated double bondcompounds, metal phthalocyanine complexes, charge-transfer complexes,condensed ring tetracarboxylic acid diimides, oligothiophenes,fullerenes, carbon nanotubes, and the like can be given. For example,polypyrrole, polythiophene, poly(3-alkylthiophene),polyphenylenevinylene, poly(p-phenylenevinylene), polyaniline,polydiacetylene, polyazulene, polypyrene, polycarbazole,polyselenophene, polyfuran, poly(p-phenylene), polyindole,polypyridazine, naphthacene, hexacene, heptacene, pyrene, chrysene,perylene, coronene, terrylene, ovalene, quaterrylene, circumanthracene,triphenodioxazine, triphenodithiazine, hexacene-6,15-quinone, polyvinylcarbazole, polyphenylene sulfide, polyvinylene sulfide,polyvinylpyridine, naphthalene tetracarboxylic acid diimide, anthracenetetracarboxylic acid diimide, C60, C70, C76, C78, and C84 andderivatives of any of these can be used. Furthermore, for specificexamples of these materials, tetracene, pentacene, sexithiophene (6T),copper phthalocyanine, bis(1,2,5-thiadiazolo)-p-quinobis(1,3-dithiole),rubrene, poly(2,5-thienylene vinylene) (PTV),poly(3-hexylthiophene-2,5-diyl) (P3HT), andpoly(9,9′-dioctyl-fluorene-co-bithiophene) (F8T2), which are generallyconsidered to be p-type semiconductors; and7,7,8,8-tetracyanoquinodimethane (TCNQ),3,4,9,10-perylenetetracarboxylic dianhydride (PTCDA),1,4,5,8-naphthalenetetracarboxylic dianhydride (NTCDA),N,N′-dioctyl-3,4,9,10-perylenetetracarboxylic diimide (PTCDI-C8H),copper hexadecafluorophthalocyanine (F₁₆CuPc);N,N′-2,2,3,3,4,4,5,5,6,6,7,7,7-di-15-hexylfluoride-1,4,5,8-naphthalenetetracarboxylicdiimide (NTCDI-C8F),3′,4′-dibutyl-5,5″-bis(dicyanomethylene)-5,5″-dihydro-2,2′:5′,2″-terthiophene)(DCMT), and methanofullerene[6,6]-phenyl-C₆₁ butyric acid methyl ester(PCBM), which are generally considered to be n-type semiconductors; andthe like can be given. It is to be noted that the attributes of p-typeand n-type of organic semiconductors are not inherent characteristics ofthe materials themselves but depend on the relationship between thematerial and an electrode from which carriers are injected or thestrength of the electric field when carriers are injected, andsemiconductor materials tend toward one of p-type and n-type but can beused as either one. It is to be noted that, in the present embodimentmode, using p-type semiconductors is more preferable than using n-typesemiconductors.

These organic semiconductor materials can be used to form films by anevaporation method, a spin-coating method, a liquid droplet dischargemethod, or the like.

Next, a buffer layer 214 is formed over the semiconductor layer 213 inorder to improve adhesiveness and the chemical stability at aninterface. For the buffer layer 214, an organic material that hasconductivity (an organic compound that exhibits electron-acceptability,for example, 7,7,8,8-tetracyanoquinodimethane (TCNQ);2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F₄-TCNQ); or thelike) or a composite material of an organic compound and a metal oxidemay be used. It is to be noted that the buffer layer 214 need not beformed if it is not needed.

Next, a source electrode and a drain electrode 215 are formed over thebuffer layer 214. There are no particular limitations on the materialsused for the source electrode and drain electrode 215; however, a metalsuch as gold, platinum, aluminum, tungsten, titanium, copper, tantalum,niobium, chromium, nickel, cobalt, magnesium, or the like or an alloythat contains any of these metals can be used. In addition, for othermaterials that can be used for the source electrode and drain electrode215, a conductive macromolecular compound such as polyaniline,polypyrrole, polythiophene, polyacetylene, polydiacetylene, and the likecan be given. It is to be noted that there are no limitations on theformation method of the source electrode and drain electrode 215 as longas it is a method with which the semiconductor layer 213 is notdegraded, and the source electrode and drain electrode 215 may befabricated by being processed into a desired shape by a method such asetching or the like after film formation by a sputtering method, anevaporation method, or the like. Furthermore, the source electrode anddrain electrode 215 may be formed by an inkjet printing method or thelike using liquid droplets that contain a conductor. By the aboveprocess, an organic transistor 227 can be fabricated.

In addition, an organic insulating material of polyimide, polyamic acid,polyvinyl phenyl, or the like may be formed in contact with the lowersurface of the semiconductor layer 213. By this kind of structure,orientation of the organic insulating material can be improved evenmore, and adhesiveness between the gate insulating film 212 and thesemiconductor layer 213 can be improved even more.

Next, a fabrication method of a light-emitting device that uses theorganic transistor 227 will be described.

Next, an interlayer insulating film 228 is formed to cover the organictransistor 227. Then, the interlayer insulating film 228 is etched asselected, and a contact hole that reaches either one of the sourceelectrode and drain electrode 215 is formed. Next, a first electrode 210that is electrically connected to the one of the source electrode anddrain electrode 215 to which the contact hole reaches is formed. Then, apartition wall 221 is formed to cover edges of the first electrode 210.The partition wall 221 is formed using an insulating material andfulfills a function to provide insulation between a plurality of thefirst electrodes 210 that is arranged adjacent to each other.

Next, a light-emitting layer 222 is formed over a region of the firstelectrode 210 that does not come into contact with the partition wall221. For materials used in the light-emitting layer 222, in many cases,a single layer or stacked layers of an organic compound or a singlelayer or stacked layers of an inorganic compound is used; in the presentspecification, the material is set to include a structure in which aninorganic compound is used in a part of a film formed from an organiccompound. For each of the layers in a light-emitting element, there areno limitations on the stacked-layer method used. If forming stackedlayers is possible, any kind of technique, including a vacuum vapordeposition method, a spin coating method, an inkjet printing method, adip coating method, or the like, may be selected.

Next, a second electrode 223 is formed over the light-emitting layer222. A light-emitting element is formed at the place where the firstelectrode 210, the second electrode 223, and the light-emitting layer222 overlap with each other. It is to be noted that this light-emittingelement has a layer that contains an organic compound or a layer thatcontains an inorganic compound, with which luminescence(electroluminescence) generated by application of an electric field isobtained (hereinafter, this type of layer will be referred to as an ELlayer); an anode; and a cathode. In particular, an inorganic EL elementusing a ZnS:Mn inorganic thin film and an organic EL element using anorganic evaporation thin film are bright, indicate highly efficient ELlight emission, and are suitable for application in a display. It is tobe noted that there are no particular limitations on the structure ofthe light-emitting element.

Next, a protective film 224 is formed over the second electrode 223. Itis to be noted that the protective film 224 need not be formed if it isnot needed.

Next, a flexible substrate 225 is affixed over the protective film 224by an adhesive layer 226. Although not shown in the diagrams, a sealantmay be placed so as to enclose the adhesive layer 226 in order tostrengthen sealing. A cross-sectional process diagram of what isobtained after processes up to this stage have been completed is shownin FIG. 2B.

Next, a stacked-layer body 229 that includes the nonmetal inorganic film103, the organic compound film 104, the organic transistor 227, thelight-emitting element, and the flexible substrate 225 is separated fromthe substrate 100. In FIG. 2C, a diagram is shown in which thestacked-layer body 229 is separated from the substrate 100 at theinterface between the molybdenum oxide film 102 and the nonmetalinorganic film 103. It is to be noted that, after the stacked-layer body229 is separated from the substrate 100, the nonmetal inorganic film 103may be removed, as necessary.

It is to be noted that, when a plurality of light-emitting devices isincluded in the stacked-layer body 229 that includes the organiccompound film 104, the organic transistor 227, and the flexiblesubstrate 225, the stacked-layer body may be divided up and theplurality of light-emitting devices cut apart. By this kind of step, aplurality of light-emitting devices 230 can be fabricated by a singleseparation step.

By the steps given above, the active matrix light-emitting device 230that uses an organic transistor can be fabricated. For example, theadhesiveness of a light-emitting layer formed by an evaporation methodis weak; however, when the separation method of the present inventionthat is used in the vicinity of a molybdenum oxide film is used, even ifa light-emitting layer formed by an evaporation method is used,separation can be done in the vicinity of the molybdenum oxide film (atan interface between the molybdenum oxide film 102 and the nonmetalinorganic film 103 in the present embodiment mode). The light-emittingdevice of the present embodiment mode is thin and has flexibility.Moreover, by provision of an organic compound film between a molybdenumoxide film and a thin film transistor, the organic compound film can bemade to function as a support of the light-emitting device. For thisreason, a support substrate used to support the light-emitting deviceneed not be formed unnecessarily, and costs can be reduced.

Furthermore, the present invention is not limited to having thestructure of the organic transistor 227 shown in FIG. 2C but may be setto have the structure shown in FIG. 15A or 15B.

The structure of FIG. 15A is a structure that is referred to as abottom-contact structure. It is to be noted that the same referencenumerals are used for parts common to those of FIGS. 2A to 2D. When abottom-contact structure is used, a process, such as a photolithographyprocess or the like, provided for microfabrication of a source wiringand a drain wiring can be used with little difficulty. For this reason,the structure of the organic transistor should be selected asappropriate based on these advantages and disadvantages.

The molybdenum film 101, the molybdenum oxide film 102, the nonmetalinorganic film 103, the organic compound film 104, and the inorganicinsulating film 105 are stacked over the substrate 100. A gate electrode251 is formed over the inorganic insulating film 105. There are noparticular limitations on the materials used to form the gate electrode251; for example, a metal such as gold, platinum, aluminum, tungsten,titanium, copper, molybdenum, tantalum, niobium, chromium, nickel,cobalt, magnesium, or the like or an alloy that contains any of thesemetals or a conductive macromolecular compound such as polyaniline,polypyrrole, polythiophene, polyacetylene, polydiacetylene, polysiliconthat is doped with an impurity, and the like can be given. It is to benoted that there are no particular limitations on the formation methodof the gate electrode 251, and the gate electrode 251 may be fabricatedby being processed into a desired shape by a method such as etching orthe like after film formation by a sputtering method, an evaporationmethod, or the like. Furthermore, the gate electrode 251 may be formedby an inkjet printing method or the like using liquid droplets thatcontain a conductor.

A gate insulating film 252 is formed to cover the gate electrode 251.The gate insulating film 252 is formed using an inorganic insulatingmaterial such as silicon oxide, silicon nitride, silicon oxynitride, orthe like. It is to be noted that the gate insulating film 252 of any ofthese materials can be formed by film formation by a coating method suchas a dipping method, a spin coating method, or a liquid dropletdischarge method; a CVD method; a sputtering method; or the like. Eithernitridation or oxidation or both nitridation and oxidation using ahigh-density plasma may be performed on this gate insulating film 252.By high-density plasma nitridation, a silicon nitride film that containssilicon at an even higher concentration can be obtained. Thehigh-density plasma is generated by use of high-frequency microwaves,for example, microwaves with a frequency of 2.45 GHz. By use of thiskind of high-density plasma, oxygen (or a gas that contains oxygen),nitrogen (or a gas that contains nitrogen), or the like can be activatedby plasma excitation, and these can be made to react with an insulatingfilm. With a high-density plasma that has the characteristic of having alow electron temperature, because the kinetic energy of an activespecies is low, a film can be formed with less plasma damage and fewerdefects compared to a film formed by conventional plasma treatment. Inaddition, with use of a high-density plasma, because the amount ofroughness on the surface of the gate insulating film 252 can be reduced,carrier mobility can be increased. Furthermore, matching up theorientation of organic semiconductor materials used to form thesemiconductor layer formed over the gate insulating film 252 becomeseasy to do.

Next, a source electrode and a drain electrode 215 are formed over thegate insulating film 252. Then, the semiconductor layer 213 is formedbetween the source electrode and drain electrode 215. For thesemiconductor layer 213 shown here, the same materials that are used toform the semiconductor layer 213 shown in FIG. 2B as described above canbe used.

Furthermore, the structure of FIG. 15B will be described. The structureof FIG. 15B is a structure that is referred to as a top-gate structure.

The molybdenum film 101, the molybdenum oxide film 102, the nonmetalinorganic film 103, the organic compound film 104, and the inorganicinsulating film 105 are stacked over the substrate 100. A sourceelectrode and a drain electrode 414 and 415 are formed over theinorganic insulating film 105. Next, a semiconductor layer 413 is formedbetween the source electrode and drain electrode 414 and 415. Then, agate insulating film 442 is formed to cover the semiconductor layer 413and the source electrode and drain electrode 414 and 415. Next, a gateelectrode 441 is formed over the gate insulating film 442. The gateelectrode 441 overlaps with the semiconductor layer 413 with the gateinsulating film 442 interposed between the gate electrode 441 and thesemiconductor layer 413.

Even with these kinds of structures of organic transistors, separationcan be performed by use of the present invention. For example, theadhesiveness of a semiconductor layer formed by a coating method isweak; however, when the separation method of the present invention thatis used in the vicinity of a molybdenum oxide film is used, even if asemiconductor layer formed by a coating method is used, separation canbe done in the vicinity of the molybdenum film (at an interface betweenthe molybdenum oxide film 102 and the nonmetal inorganic film 103 in thepresent embodiment mode).

In addition, a transistor that uses a semiconductor layer formed of ZnOor an oxide of zinc-gallium-indium fabricated by a sputtering method ora PLD method can be used instead of an organic transistor. In this case,the structure in FIG. 15A or 15B can be applied. Furthermore, when ZnOor an oxide of zinc-gallium-indium is used in a semiconductor layer, itis preferable that the gate insulating film be set to be an oxide thatcontains aluminum or titanium. As thus described, the present inventionis useful in formation of a transistor that includes a process forirradiation of a substrate with a plasma; after the transistor is formedover a substrate that can withstand the plasma, a flexible substratethat has low endurance toward plasma is attached thereto and thetransistor is separated from the substrate, whereby a light-emittingdevice can be fabricated.

It is to be noted that if the mechanical strength of the light-emittingdevice is low, a flexible substrate may be affixed to the surface atwhich separation is performed using an adhesive layer. In this case, inorder to preserve a space between substrates despite changes intemperature, it is preferable that a flexible substrate with the samecoefficient of thermal expansion as the flexible substrate 225 be used.

Furthermore, the present embodiment mode can be freely combined withEmbodiment Mode 1. For example, a liquid crystal display device thatuses the organic transistors given in Embodiment Mode 2 instead of theamorphous thin film transistors given in Embodiment Mode 1 can befabricated. In addition, a light-emitting device that uses the amorphousthin film transistors given in Embodiment Mode 1 instead of the organictransistors given in Embodiment Mode 2 can be fabricated, as well.

Embodiment Mode 3

Here, an example in which a passive matrix light-emitting device isfabricated over a flexible substrate will be described using FIGS. 5A to5C, FIG. 6, FIG. 7, FIGS. 8A and 8B, and FIG. 9.

A passive matrix (simple matrix) light-emitting device has a structurein which a plurality of anodes is provided in parallel stripe form (bandform) and a plurality of cathodes is provided in parallel stripe form sothat the plurality of anodes and the plurality of cathodes areperpendicular to each other and a structure in which a light-emittinglayer or a fluorescent layer is inserted at an intersection of each ofthe plurality of anodes and plurality of cathodes. Consequently, a pixellocated at an intersection of a selected anode (an anode to which avoltage is applied) and a selected cathode comes to be lit up.

FIG. 5A is a diagram illustrating a top view of a pixel portion before aflexible substrate is attached to a second electrode 516 of alight-emitting element. FIG. 5B is a cross-sectional view of a crosssection taken along a dotted line A-A′ in FIG. 5A, and FIG. 5C is across-sectional view of a cross section taken along a dotted line B-B′in FIG. 5A.

Over the substrate 100, as in Embodiment Mode 2, the molybdenum film101, the molybdenum oxide film 102, the nonmetal inorganic film 103, theorganic compound film 104, and the inorganic insulating film 105 areformed. Over the inorganic insulating film 105, a plurality of firstelectrodes 513 is arranged in stripe form with equal spacing betweenadjacent first electrodes 513. Furthermore, over the first electrodes513, a partition wall 514 that has openings, with each openingcorresponding to a pixel, is provided, and the partition wall 514 thathas openings is formed of an insulating material (an organic material (aphotosensitive or photosensitive organic material (polyimide, acrylic,polyamide, polyimide-amide, a resist, or benzocyclobutane) or an SOGfilm (for example, an SiO_(x) film that has an alkyl group)). It is tobe noted that each opening corresponding to a pixel acts as alight-emitting region 521.

Over the partition wall 514 that has openings, a plurality of mutuallyparallel reverse taper partition walls 522 is provided to intersect withthe first electrodes 513. The reverse taper partition walls 522 areformed by a photolithography method along with adjustment of the amountof exposure to light and length of time for image development so thatthe lower part of a pattern is etched more than other parts using apositive photosensitive resin with an unexposed part left remaining asthe pattern.

Furthermore, a perspective-view diagram illustrating the device rightafter the plurality of parallel reverse taper partition walls 522 hasbeen formed is shown in FIG. 6.

The height of the reverse taper partition wall 522 is set to be greaterthan the combined film thicknesses of a stacked-layer film that includesa light-emitting layer and a conductive film. The stacked-layer filmthat includes a light-emitting layer and the conductive film, formed andstacked together with respect to the substrate that has the structureshown in FIG. 6, are separated into a plurality of electricallyindependent regions as shown in FIGS. 5A to 5C, and stacked-layer films515R, 515G, and 515B that each include a light-emitting layer and secondelectrodes 516 are formed. The second electrodes 516 are mutuallyparallel striped-shaped electrodes that extend in a direction ofintersection with the first electrodes 513. It is to be noted that thestacked-layer films that each include a light-emitting layer and theconductive films are formed over the reverse taper partition walls 522;however, they are isolated from the stacked-layer films 515R, 515G, and515B that each include a light-emitting layer and the second electrodes516.

Here, an example in which a light-emitting device by which full-colordisplay can be achieved, where emission of three different colors oflight (R, G, and B) is obtained by formation of the stacked-layer films515R, 515G, and 515B that each include a light-emitting layer asselected, is fabricated is shown. The stacked-layer films 515R, 515G,and 515B that each include a light-emitting layer are formed into amutually parallel stripe pattern.

Furthermore, light-emitting elements of a single color may be providedby formation of stacked-layer films that each include a light-emittinglayer that emits light of the same emission color over the entiresurface, and the light-emitting device may be set to be one by whichmonochrome display can be achieved or one by which area color displaycan be achieved. In addition, the light-emitting device may be set to beone by which full-color display can be achieved by combination of acolor filter and a light-emitting device in which emission of whitelight is obtained.

Next, a top-view diagram of a light-emitting module in which an FPC orthe like is mounted is shown in FIG. 7.

It is to be noted that “light-emitting devices” in the presentspecification refers to image display devices, light-emitting devices,and light sources (which include lighting systems). Moreover, modules inwhich a connector, for example, a flexible printed circuit (an FPC), atape automated bonding tape (TAB tape), or a tape carrier package (TCP)is attached to a light-emitting device; modules in which the edge of aTAB tape or a TCP is attached to a printed circuit board; and modules inwhich integrated circuits (ICs) are directly mounted into light-emittingelements by a chip on glass (COG) method are all considered to beincluded in the term “light-emitting device.”

In a pixel portion forming an image display as shown in FIG. 7, scanninglines and data lines are arranged to intersect with each other so thatthe scanning lines and data lines are mutually orthogonal.

The first electrode 513, the second electrode 516, and the reverse taperpartition wall 522 of FIGS. 5A to 5C correspond to a scanning line 602,a data line 603, and a partition wall 604 of FIG. 7, respectively. Alight-emitting layer is interposed between the data line 603 and thescanning line 602, and an intersection indicated by a region 605 isdefined as a single pixel.

It is to be noted that the data line 603 is electrically connected to aconnecting wiring 608 that is formed of conductive layers 829 and 830 atthe edge of the wiring, and the connecting wiring 608 is connected to anFPC 609 b via an input terminal 607. In addition, the scanning line 602is connected to an FPC 609 a via an input terminal 606.

Next, a flexible substrate is attached using an adhesive layer.

Next, the light-emitting element is separated from the substrate 100. Itis to be noted that, after the light-emitting element is separated fromthe substrate 100, the nonmetal inorganic film 103 may be removed, asnecessary.

In addition, if needed, optical films, such as a polarizer, a circularpolarizer (including an elliptical polarizer), a retarder plate (aquarter-wave plate, a half-wave plate), a color filter, and the like,may be provided on a projection surface of the light-emitting element,as appropriate. Moreover, an antireflective film may be provided overthe polarizer or circular polarizer, and the number of reflections canbe reduced. Furthermore, antiglare treatment by which reflection oflight due to unevenness over a surface can be diffused and glare can bereduced can be provided.

By the above steps, a flexible passive matrix light-emitting device canbe fabricated. Because thermocompression bonding is performed to mountan FPC in a light-emitting device, it is preferable that mounting of theFPC by thermocompression bonding be performed on a hard substrate. Bythe present invention, by performance of separation after an FPC hasbeen mounted in a light-emitting device, a thin light-emitting devicethat is flexible can be fabricated.

In addition, in FIG. 7, an example is shown in which no driver circuitis provided over the substrate; however, an example of a manufacturingmethod for a light-emitting module in which an IC chip that has a drivercircuit is mounted will be described hereinafter using FIGS. 8A and 8B.

First, over the substrate 100, as in Embodiment Mode 1, a molybdenumfilm, a molybdenum oxide film, and an insulating film are formed. Overthis insulating film, the scanning line 602 (which also functions as ananode) that has a stacked-layer structure, where the lower layer isformed of a metal film that can reflect light and the upper layer isformed of a transparent oxide conductive film, is formed.Simultaneously, the connecting wirings 608, 709 a, and 709 b and inputterminals are formed.

Next, a partition wall that has openings, with each openingcorresponding to a pixel, is provided. Then, over the partition wallthat has openings (which is not shown in the diagrams), the plurality ofthe mutually parallel reverse taper partition walls 604 is formed tointersect with the scanning lines 602. A top-view diagram of what isobtained after the steps outlined above have been completed is shown inFIG. 8A.

Subsequently, the stacked-layer film that includes a light-emittinglayer and the transparent conductive film being formed and stacked, oneover the other, are separated into a plurality of electricallyindependent regions as shown in FIG. 8B, and the stacked-layer film thatincludes a light-emitting layers and the data lines 603, which are madefrom a transparent conductive film, are formed. The data lines 603 thatare made from a transparent conductive film are mutually parallelstriped-shaped electrodes that extend in a direction of intersectionwith the scanning lines 602.

Next, in a region in the periphery (outer side) of a pixel portion, anIC 706 on the scanning line side and an IC 707 on the data line sidethat each have a driver circuit that is used to transmit a variety ofsignals to the pixel portion are each mounted by use of a COG method.TCP and wire bonding methods may be used as mounting techniques, inaddition to the COG method, to mount the ICs in a region in theperiphery (outer side) of the pixel portion. TCP is a method in which anIC is mounted onto a TAB tape, where a TAB tape is connected to a wiringon an element formation substrate and an IC is mounted onto the TABtape. The IC 706 on the scanning line side and the IC 707 on the dataline side may be ICs formed using a silicon substrate, or they may bedriver circuits formed using thin film transistors over a glasssubstrate, a quartz substrate, or a plastic substrate. In addition, anexample is shown in which one IC is provided on one side; however, thestructure may be one in which a plurality of ICs, divided up intoindividual parts, is provided on one side.

It is to be noted that each of the data lines 603 is electricallyconnected to one of the connecting wirings 608 at the edge of thewiring, and each of the connecting wirings is connected to the IC 707 onthe data line side. This is because forming the IC 707 on the data lineside over the reverse taper partition walls 604 is difficult.

The IC 706 on the scanning line side, as in the structure describedabove, is connected to an FPC 711 a via the connecting wiring 709 a.Furthermore, the IC 707 on the data line side is connected to an FPC 711b via the connecting wiring 709 b.

Moreover, integration can be achieved by implementation of an IC chip712 (a memory chip, a CPU chip, a power supply circuit chip, or thelike).

Next, a flexible substrate is attached using an adhesive layer so as tocover the IC chip 712.

Next, the light-emitting element is separated from the substrate 100. Itis to be noted that, after the light-emitting element is separated fromthe substrate 100, the nonmetal inorganic film 103 may be removed, asnecessary. An example of the structure of a cross section at this timetaken along a dotted line C-D in FIG. 8B is shown in FIG. 9.

The scanning line 602 is formed as a two-layer stacked layer structure,where a lower layer 812 is formed of a metal film that can reflect lightand an upper layer 813 is formed of a transparent oxide conductive film.For the upper layer 813, it is preferable that a conductive film thathas a high work function be used; in addition to indium tin oxide (ITO),for example, a film that contains a transparent conductive material suchas indium tin oxide containing elemental Si, indium zinc oxide (IZO) inwhich zinc oxide (ZnO) is mixed into indium oxide, or the like or acompound of a combination of any of these materials can be used. Inaddition, for the lower layer 812, an Ag film, an Al film, or an Alalloy film is used.

The partition wall 514 that is used in order to make adjacent scanninglines be insulated from each other is formed of a resin, and regionsenclosed by the partition wall all come to have the same area withrespect to light-emitting regions.

The data lines 603 (cathodes) and the scanning lines 602 (anodes) areformed so as to intersect with each other. The data lines (cathodes) 603are formed using a transparent conductive film such as a film of ITO,indium tin oxide containing elemental Si, indium zinc oxide (IZO) inwhich zinc oxide (ZnO) is mixed into indium oxide, or the like. Becausethe light-emitting device of the present embodiment mode is an exampleof a top-emission light-emitting device in which emitted light passesthrough a flexible substrate 820, that the data lines 603 aretransparent is important.

Furthermore, the flexible substrate 820 is attached to a pixel portion,in which each of a plurality of light-emitting elements is arranged at apoint of intersection between a scanning line and a data line thatsandwich a stacked-layer film 815 that has a light-emitting layer; aterminal portion; and a peripheral portion, by an adhesive layer 817.For the adhesive layer 817, a UV curable resin, a thermally curableresin, a silicone resin, an epoxy resin, an acrylic resin, a polyimideresin, a phenolic resin, polyvinyl chloride (PVC), polyvinyl butyral(PVB), or ethylene vinyl acetate (EVA) can be used.

The connection wiring 709 b is formed in the terminal portion, and theFPC 711 b (a flexible printed circuit board) that is connected to anexternal circuit is attached to this portion. The connection wiring 709b is formed of stacked layers of a metal film 827 that reflects light, atransparent oxide conductive film 826, and an oxide conductive film thatextends from the second electrodes; however, there are no limitations,in particular, on the structure of the connection wiring 709 b.

For the method by which the FPC 711 b is mounted to the terminalportion, a connection method that uses an anisotropic conductivematerial or a metal bump or a wire bonding method can be employed. InFIG. 9, connection of the FPC 711 b is performed using an anisotropicconductive adhesive 831.

In addition, the IC 707 on the data line side that has a driver circuitthat is used to transmit a variety of signals to the pixel portion iselectrically connected to the periphery of the pixel portion byanisotropic conductive materials 824 and 825. Moreover, in order to forma pixel portion corresponding to color display of XGA class, there needto be 3072 lines for the number of data lines, and there need to be 768lines on the scanning line side. The data lines and scanning linesformed at these kinds of numbers are divided up at an edge of the pixelportion for every number of blocks, and leader line wirings are formedand lined up to match the pitch of output terminals of the IC.

By the above steps, a light-emitting module that is sealed by theorganic compound film 104, on the outer side of which is formed thenonmetal inorganic film 103, and the flexible substrate 820 and in whichan IC is mounted can be fabricated. Because thermocompression bonding isperformed to mount an IC onto a light-emitting device, it is preferablethat mounting of the IC by thermocompression bonding be performed on ahard substrate. By the present invention, separation is performed afteran IC has been mounted in the light-emitting device, and thelight-emitting device can be fabricated.

Embodiment Mode 4

In the present embodiment mode, a mode of fabrication of a semiconductordevice that functions as a wireless chip will be shown. Thesemiconductor device shown in the present embodiment mode is a device bywhich reading and writing of data can be done contactlessly. Datatransmission types are roughly divided up into three types: anelectromagnetic coupling method by which each of a pair of coils isarranged opposite from the other and data is communicated by mutualinductance, an electromagnetic induction method by which data iscommunicated by induction field, and an electromagnetic wave method inwhich data is communicated using electromagnetic waves. Any of thesemethods may be used.

Furthermore, there are two ways in which an antenna used in thetransmission of data is provided. One way is to provide a terminalportion in a semiconductor component in which a plurality of elementsand memory elements (hereinafter, this kind of component will bereferred to as an element substrate) is provided and to connect anantenna that is formed over a different substrate to the terminalportion. The other way is to have an antenna be built onto an elementsubstrate in which are provided a plurality of semiconductor elements,passive elements, and the like.

A fabrication method for when an antenna is provided where the antennathat is provided over a separate substrate is connected to a terminalportion of an element substrate will be presented hereinafter.

First, as in Embodiment Mode 1, as shown in FIG. 10A, the molybdenumfilm 101 is formed over the substrate 100, the molybdenum oxide film 102is formed over the molybdenum film 101, the nonmetal inorganic film 103is formed over the molybdenum oxide film 102, and the organic compoundfilm 104 is formed over the nonmetal inorganic film 103. It is to benoted that, as shown in Embodiment Mode 1, the inorganic insulating film105 may be formed over the organic compound film 104, if necessary.

Next, as shown in FIG. 10B, a conductive layer 904 that functions as anantenna is formed over the organic compound film 104. The conductivelayer 904 that functions as an antenna is formed of droplets that haveor a paste that has a conductor such as gold, silver, copper, or thelike, where the droplets are or the paste is discharged by a liquiddroplet discharge method (an inkjet printing method, a dispenser method,or the like) and dried and baked. By formation of conductive layer 904that functions as an antenna by a liquid droplet discharge method, areduction in the number of process steps is possible, and a reduction incosts is possible, as well. In addition, the conductive layer 904 mayalso be formed by use of a screen printing method. When a screenprinting method is used, for a material for the conductive layer 904that functions as an antenna, a conductive paste in which conductiveparticles, each with a diameter of from several nanometers to severaltens of micrometers, are dissolved in or dispersed throughout an organicresin is printed as selected. For the conductive particles, metalparticles of one or more of silver (Ag), gold (Au), copper (Cu), nickel(Ni), platinum (Pt), palladium (Pd), tantalum (Ta), molybdenum (Mo),titanium (Ti), and the like; fine particles of a silver halide; ordispersive nanoparticles of any of these can be used. Moreover, for theorganic resin that is contained in the conductive paste, one or moreorganic resins selected from organic resins that function as binders,solvents, dispersants, or coating materials of metal particles can beused. Typically, organic resins such as epoxy resins, silicone resins,and the like can be given. Furthermore, in formation of the conductivelayer 904, it is preferable that the conductive paste be baked afterbeing extruded. Additionally, particles containing solder or lead-freesolder as the main component may be used, and in this case, it ispreferable that fine particles with a diameter of 20 μm or less be used.Solder and lead-free solder both have an advantage in that they areinexpensive. In addition to the materials given above, a ceramic,ferrite, or the like may be applied for the antenna, as well.

When the antenna is fabricated using a screen printing method or aliquid droplet discharge method, after formation of the antenna into adesired shape, baking is performed. The baking temperature is from 200°C. to 300° C. Baking at a temperature less than 200° C. is alsopossible; however, when the baking temperature is less than 200° C.,there is a risk that the conductivity of the antenna cannot bemaintained or that the communication distance for the antenna willbecome too short. In consideration of these points, it is preferablethat, after the antenna is formed over a separate substrate, namely, asubstrate that can withstand high temperatures, the antenna be separatedfrom the substrate and connected to the element substrate.

Moreover, the antenna may be formed using gravure printing or the likein addition to being formed by a screen printing method, as well, or theantenna can be formed of a conductive material using a plating method orthe like.

Next, separation is performed, as shown in FIG. 10C, to separate thenonmetal inorganic film 103 from the substrate 100. Because separationcan be performed with the addition of relatively little force in aseparation method of the present invention that uses a molybdenum oxidefilm, yield can be improved. In addition, because the separation methodof the present invention uses separation in the vicinity of a molybdenumoxide film by the addition of relatively little force only without anyneed for heat treatment at a temperature of 500° C. or more, changes inthe shape of the organic compound film 104 occurring while separation isbeing performed can be suppressed, and the amount of damage that theconductive layer 904 receives can be reduced. It is to be noted that,after performance of the separation step, the nonmetal inorganic film103 may be removed, as necessary.

Next, as shown in FIG. 10D, an element substrate 907 is placed over thesurface of the organic compound film 104 over which the compound layer904 is provided. By compression bonding using an anisotropic conductivematerial, electrical continuity between a terminal portion of theelement substrate and the conductive layer 904 is achieved.

It is to be noted that, in FIGS. 10A to 10D, after a stacked-layer bodythat includes the conductive layer 904 is separated from the substrate100, the conductive layer 904 and the element substrate 907 areconnected to each other; however, the stacked-layer body that includesthe conductive layer 904 may instead be separated from the substrate 100after the conductive layer 904 is baked and connected to the elementsubstrate 907.

Moreover, when a plurality of conductive layers that each functions asan antenna are formed over the stacked-layer body that includes theconductive layer 904, after the stacked-layer body is divided up and aplurality of stacked-layer bodies that each has the conductive layer 904that functions as an antenna is formed, the element substrate may beconnected to the conductive layer 904.

Furthermore, in FIG. 10D, an example is shown in which the elementsubstrate 907 has a small area compared to that of the organic compoundfilm 104; however, the present invention is not limited to this case, inparticular, and the element substrate may be formed to haveapproximately the same area as that of the organic compound film 104, orit may be formed to have a larger area than that of the organic compoundfilm 104.

By the steps given above, a semiconductor device that functions as an ICtag can be completed. The semiconductor device is thin and hasflexibility. Moreover, by provision of an organic compound film betweena molybdenum oxide film and a conductive layer that functions as anantenna, the organic compound film can be made to function as a supportof the semiconductor device. For this reason, a support substrate usedto support the semiconductor device need not be formed unnecessarily,and costs can be reduced.

It is to be noted that, lastly, to protect the element substrate 907,the organic compound film 104 and another flexible substrate may beattached so as to cover the element substrate 907.

Next, a method for fabrication of a semiconductor device that functionsas a wireless chip where an antenna is formed over an element substratein which an element and a memory element are provided will be describedusing FIGS. 3A to 3D.

As in Embodiment Mode 1, as shown in FIG. 3A, the molybdenum film 101 isformed over the substrate 100, the molybdenum oxide film 102 is formedover the molybdenum film 101, the nonmetal inorganic film 103 is formedover the molybdenum oxide film 102, the organic compound film 104 isformed over the nonmetal inorganic film 103, and the inorganicinsulating film 105 is formed over the organic compound film 104.

Next, an amorphous semiconductor film is formed over the inorganicinsulating film 105. The amorphous semiconductor film is formed in thesame way as the amorphous semiconductor film 108 shown in EmbodimentMode 1 is formed. Here, an amorphous silicon film is formed at athickness of greater than or equal to 10 nm and less than or equal to100 nm, preferably, greater than or equal to 20 nm and less than orequal to 80 nm, by a plasma CVD method.

Next, the amorphous semiconductor film is scanned with a laser beam 302,and a crystalline semiconductor film is formed. In FIG. 3A, an exampleis shown in which a crystalline semiconductor film 303 is formed by alaser annealing method with which an amorphous semiconductor film 301 isscanned with a laser beam.

When crystallization is performed using a laser annealing method, apulsed laser or continuous wave laser can be used. Furthermore, thelaser wavelength is set to be within the visible to ultraviolet lightregion (wavelength of 800 nm or less) of the electromagnetic spectrum,preferably within the ultraviolet light region (wavelength of 400 nm orless), so that the laser beam is absorbed by the semiconductor filmeffectively. For a laser oscillator, an excimer laser oscillator of KrF,ArF, XeCl, XeF, or the like; a gas laser oscillator of N₂, He, He—Cd,Ar, He—Ne, HF, or the like; a solid-state laser oscillator using acrystal such as YAG, GdVO₄, YVO₄, YLF, YAlO₃, ScO₃, Lu₂O₃, Y₂O₃, or thelike that is doped with Cr, Nd, Er, Ho, Ce, Co, Ti, Yb, or Tm; a metalvapor laser oscillator such as a helium-cadmium oscillator or the like;or the like can be used. It is to be noted that, with a solid-statelaser oscillator, it is preferable that the third to fifth harmonics ofa fundamental wave be applied. A laser beam is focused by an opticalsystem and used; for example, the laser beam is processed into a linearform, and laser annealing is performed. Laser annealing conditions areselected as appropriate by a practitioner; for one example of the laserannealing conditions, the laser pulse repetition rate is set to 30 Hz,and the laser energy density is set to from 100 mJ/cm² to 500 mJ/cm²(typically, from 300 mJ/cm² to 400 mJ/cm²). Then, the linear beam ispassed over the entire surface of a substrate to irradiate thesubstrate, and laser irradiation is performed with the superpositionpercentage (overlap percentage) of the linear beams at this time set tobe from 80% to 98%. In this way, a crystalline semiconductor film can beformed.

Here, a crystalline silicon film is formed by irradiation of anamorphous silicon film with an excimer laser beam.

It is to be noted that, in order to prevent the ejection of hydrogenfrom the amorphous semiconductor film, before an amorphous silicon filmis irradiated with a laser beam, it is preferable that the amorphoussilicon film be irradiated with a laser beam of lower energy than theenergy of the laser beam used for crystallization in order to removehydrogen that is in the amorphous silicon film.

Next, the crystalline semiconductor film 303 is etched as selected, andsemiconductor layers 321 and 322 are formed. Here, for an etching methodof the crystalline semiconductor film, dry etching, wet etching, and thelike can be used. Here, after a resist is applied over the crystallinesemiconductor film, exposure to light and development are carried out,and a resist mask is formed. Next, the crystalline semiconductor film isetched as selected by dry etching using the resist mask where the flowratio of SF₆:O₂ is set to be 4:15. After the crystalline semiconductorfilm is etched, the resist mask is removed.

Next, a gate insulating film 323 is formed over the semiconductor layers321 and 322. The gate insulating film 323 is formed as a single layer oras a stacked-layer structure of silicon nitride, silicon nitride thatcontains oxygen, silicon oxide, silicon oxide that contains nitrogen, orthe like. Here, the gate insulating film 323 is formed of silicon oxidethat contains nitrogen at a thickness of 115 nm by a plasma CVD method.

Next, gate electrodes 324 and 325 are formed. The gate electrodes 324and 325 can be formed of a metal or of a polycrystalline semiconductorthat is doped with an impurity of one conductivity type. When a metal isused, tungsten (W), molybdenum (Mo), titanium (Ti), tantalum (Ta),aluminum (Al), or the like can be used. Furthermore, a metal nitridewhere a metal has been nitrided can be used. Alternatively, thestructure of each of the gate electrodes 324 and 325 may be set to be astructure in which a first layer formed from the metal nitride and asecond layer formed from the metal are stacked together. In addition,the gate electrodes 324 and 325 can be formed using a paste thatcontains fine particles where the paste that contains fine particles isextruded onto the gate insulating film by a liquid droplet dischargemethod, dried, and baked. Moreover, the gate electrodes 324 and 325 canbe formed using a paste that contains fine particles where the pastethat contains fine particles is printed onto the gate insulating film bya printing method, dried, and baked. For typical examples for the fineparticles, the fine particles may be fine particles whose main componentis set to be any of gold, copper, an alloy of gold and silver, an alloyof gold and copper, an alloy of silver and copper, or an alloy of gold,silver, and copper. Here, after a tantalum nitride film with a filmthickness of 30 nm and a tungsten film with a thickness of 370 nm areformed over the gate insulating film 323 by a sputtering method, thetantalum nitride film and the tungsten film are etched as selected usinga resist mask that is formed by a photolithography process, and the gateelectrodes 324 and 325 that have a shape where the edge of the tantalumnitride film projects past the edge of the tungsten film are formed.

Next, the gate electrodes 324 and 325 are used as masks, thesemiconductor layers 321 and 322 are doped with an impurity elementimparting n-type conductivity and an impurity element imparting p-typeconductivity, respectively, and source regions and drain regions 326 to329 are formed. Furthermore, low-concentration impurity regions 331 to334 overlapping with part of the gate electrodes 324 and 325 are formed.Here, the source regions and drain regions 326 to 329 and thelow-concentration impurity regions 331 to 334 are doped with phosphorus,which is an impurity element that imparts n-type conductivity.

After doping is performed, the impurity element with which thesemiconductor film has been doped may be activated. Here, the impuritymay be activated by irradiation with a laser beam. By the above steps,thin film transistors 320 a and 320 b are formed. It is to be noted thatn-channel thin film transistors are formed for the thin film transistors320 a and 320 b. Furthermore, although not shown in the diagrams, adriver circuit is formed of a p-channel thin film transistor and ann-channel thin film transistor.

Next, an interlayer insulating film used to insulate the gate electrodesof the thin film transistors 320 a and 320 b and wirings is formed.Here, a silicon oxide film 335 a, a silicon nitride film 335 b, and asilicon oxide film 335 c are stacked together to form the interlayerinsulating film. In addition, over the silicon oxide film 335 c, whichis one part of the interlayer insulating film, wirings 336 to 339 usedto connect to the source regions and drain regions 326 to 329 of thethin film transistors 320 a and 320 b are formed. Here, after a Ti filmwith a thickness of 100 nm, an Al film with a thickness of 333 nm, and aTi film with a thickness of 100 nm are formed consecutively by asputtering method, the films are etched as selected using a resist maskthat is formed by a photolithography process, and the wirings 336 to 339are formed. After the wirings 336 to 339 are formed, the resist mask isremoved.

Subsequently, a conductive layer 313 that functions as an antenna isformed over the wiring 339 that is connected to the thin film transistor320 b. The conductive layer 313 that functions as an antenna can beformed in the same way as the conductive layer 904 that functions as anantenna shown in FIGS. 10A to 10D is formed. Alternatively, theconductive layer 313 that functions as an antenna can be formed where,after a conductive layer is formed by a sputtering method, theconductive layer is etched as selected using a mask that is formed by aphotolithography process to form the conductive layer 313 that functionsas an antenna.

After the conductive layer 313 that functions as an antenna is formed, apassivation film 314 may be formed over the conductive layer 313 thatfunctions as an antenna and the interlayer insulating film. By formationof the passivation film 314, contamination of the conductive layer 313that functions as an antenna and the thin film transistors 320 a and 320b with moisture, oxygen, or impurities from external can be avoided. Thepassivation film 314 is formed of silicon nitride, silicon oxide,silicon nitride oxide, silicon oxynitride, diamond-like carbon (DLC),nitrogen carbide, or the like.

Next, as shown in FIG. 3C, a flexible substrate 342 is affixed over thepassivation film 314 using an adhesive layer 341.

Next, a stacked-layer body 343 that includes the nonmetal inorganic film103, the organic compound film 104, the thin film transistors 320 a and320 b, the conductive layer 313 that functions as an antenna and theflexible substrate 342 is separated from the substrate 100. Because themolybdenum oxide film is brittle, separation of a stacked-layer bodyfrom a substrate can be performed with relatively little force. It is tobe noted that, after the stacked-layer body 343 is separated from thesubstrate 100, the nonmetal inorganic film 103 may be removed, asnecessary.

It is to be noted that, when a plurality of semiconductor devices isincluded in the stacked-layer body 343 that includes the nonmetalinorganic film 103, the organic compound film 104, the thin filmtransistors 320 a and 320 b, the conductive layer 313 that functions asan antenna and the flexible substrate 342, the stacked-layer body may bedivided up and the plurality of semiconductor devices cut apart. By thiskind of step, a plurality of semiconductor devices can be fabricated bya single separation step.

By the steps given above, a semiconductor device 344 that functions asan IC tag can be completed. The semiconductor device of the presentembodiment mode is thin and has flexibility. Moreover, by provision ofan organic compound film between a molybdenum oxide film and a thin filmtransistor, the organic compound film can be made to function as asupport of the semiconductor device. For this reason, a supportsubstrate used to support the semiconductor device need not be formedunnecessarily, and costs can be reduced.

Here, for a transmission method for signals in the semiconductor device,an electromagnetic coupling method or an electromagnetic inductionmethod (for example, frequency in the 13.56 MHz band) is applied.Because electromagnetic induction by changes in magnetic field densityis used, in FIG. 10D, the upper surface of a conductive layer thatfunctions as an antenna is formed as a circular shape (for example, as aloop antenna) or a coil shape (for example, as a spiral antenna);however, there are no particular limitations on the shape into which theconductive layer is formed.

Moreover, for a transmission method for signals in the semiconductordevice, a microwave (for example, waves with frequencies in the UHF band(from 860 MHz to 960 MHz), in the 2.45 GHz, or the like) method can beapplied. In this case, the shape, such as the length and the like, ofthe conductive layer that functions as an antenna may be set asappropriate in consideration of the wavelength of the electromagneticwaves used in the transmission of signals. Examples of a chip-formsemiconductor device 913 that has a conductive layer 912 that functionsas an antenna and an integrated circuit that are formed over the organiccompound film 104 are shown in FIGS. 11A to 11D. For example, the shapeof the upper surface of a conductive layer that functions as an antennacan be formed into a linear shape (for example, as a dipole antenna(referring to FIG. 11A)), a planar shape (for example, as a patchantenna (referring to FIG. 11B), a ribbon shape (referring to FIGS. 11Cand 11D), or the like. In addition, the shape of the conductive layerthat functions as an antenna is not limited to being a linear shape butmay be provided as a curved-line shape or a serpentine shape or as ashape that is a combination of any of these shapes, in consideration ofthe wavelength of the electromagnetic waves.

Furthermore, a structure of a semiconductor device obtained by the abovesteps will be described with reference to FIG. 12A. As shown in FIG.12A, a semiconductor device 1120 obtained by use of the presentinvention has a function by which data can be communicated bynon-contact and has a power supply circuit 1111, a clock generatorcircuit 1112, a data demodulation or modulation circuit 1113, acontroller circuit 1114 that is used to control other circuits, aninterface circuit 1115, a memory circuit 1116, a data bus 1117, anantenna 1118, a sensor 1121, and a sensor circuit 1122.

The power supply circuit 1111 is a circuit that generates a variety ofpower supply signals supplied to each internal circuit of thesemiconductor device 1120 based on alternating current signals inputfrom the antenna 1118. The clock generator circuit 1112 is a circuitthat generates a variety of clock signals that are supplied to eachinternal circuit of the semiconductor device 1120 based on alternatingcurrent signals input from the antenna 1118. The data demodulation ormodulation circuit 1113 has a function used to demodulate or modulatedata exchanged with a communications device 1119. The controller circuit1114 has a function used to control the memory circuit 1116. The antenna1118 has a function used to transmit and receive electromagnetic waves.The communications device 1119 communicates with and controls thesemiconductor device and controls the processing of data thereof. It isto be noted that the semiconductor device is not limited to having theabove structure; for example, the structure may be one that includesadditional components such as a power supply voltage limiter circuit orhardware used exclusively for cryptography.

The memory circuit 1116 has a memory element in which an organiccompound layer or a phase-change layer is interposed between a pair ofconductive layers. It is to be noted that the memory circuit 1116 mayhave only a memory element in which an organic compound layer or aphase-change layer is interposed between a pair of conductive layers, orthe memory circuit 1116 may have a memory circuit that has anotherstructure. A memory circuit with another kind of structure correspondsto one or more of any of the following: a DRAM circuit, an SRAM circuit,an FeRAM circuit, a mask ROM circuit, a PROM circuit, an EPROM circuit,an EEPROM circuit, or a flash memory circuit.

The sensor 1121 is formed of a semiconductor element such as a resistiveelement, a capacitive-coupling element, an inductive-coupling element, aphotovoltaic element, a photoelectric element, a thermoelectromotiveelement, a transistor, a thermistor, a diode, or the like. The sensorcircuit 1122 detects changes in impedance, reactance, inductance,voltage, or current; converts signals from analog to digital (A/Dconversion); and outputs signals to the controller circuit 1114.

Furthermore, the present embodiment mode can be freely combined withEmbodiment Mode 1 or Embodiment Mode 2. For example, an elementsubstrate, which has been separated from a substrate, in which anintegrated circuit formed using thin film transistors obtained by use ofEmbodiment Mode 1 or Embodiment Mode 2 is formed and a flexiblesubstrate over which an antenna obtained by use of the presentembodiment mode is provided are attached together, and electricalconnectivity is achieved therebetween.

By the present invention, a semiconductor device that functions as an ICtag that has a processor circuit (hereinafter, these types of IC tagswill also be referred to as IC chips, processor chips, wireless chips,wireless processors, wireless memory chips, and wireless tags) can beformed. The range of applications for a semiconductor device obtained byuse of the present invention covers a wide range; for example, thesemiconductor device can be provided and used in articles such as papermoney, coins, securities, certificates, unregistered bonds, packagingcontainers, books, storage media, personal belongings, vehicles, foodproducts, clothing, healthcare products, household goods, medicines,electronic devices, and the like.

Paper money and coins are money that circulates the market and includeobjects (cash vouchers) that are used in the same way as currency withina limited region, memorial coins, and the like. Securities refer tochecks, bonds, promissory notes, and the like, and an IC tag 90 that hasa processor circuit can be provided therewith (referring to FIG. 13A).Certificates refer to driver's licenses, residence certificates, and thelike, and an IC tag 91 can be provided therewith (referring to FIG.13B). Vehicles refer to wheeled vehicles such as bikes and the like,ships, and the like, and an IC tag 96 can be provided therewith(referring to FIG. 13C). Unregistered bonds refer to stamps, ricecoupons, various kinds of gift vouchers, and the like. Packagingcontainers refer to wrapping paper for lunch boxes and the like, plasticbottles, and the like, and an IC tag 93 can be provided therewith(referring to FIG. 13D). Books refer to printed books, and an IC tag 94can be provided therewith (referring to FIG. 13E). Storage media referto DVDs, video tapes, and the like, and an IC tag 95 can be providedtherewith (referring to FIG. 13F). Personal belongings refer to bags,eyeglasses, and the like, and an IC tag 97 can be provided therewith(referring to FIG. 13G). Food products refer to foods, beverages, andthe like. Clothing refers to garments, footwear, and the like.Healthcare products refer to medical equipment, healthcare equipment,and the like. Household goods refer to furniture, lighting equipment,and the like. Medicines refer to pharmaceuticals, agrochemicals, and thelike. Electronic devices refer to liquid crystal display devices, ELdisplay devices, television devices (television sets, flat-screentelevision sets), cellular phones, and the like.

A semiconductor device obtained by use of the present invention isaffixed to an article by being mounted to a printed circuit board, bybeing attached to a surface of the article, or by being embedded in thearticle. For example, for a book, the semiconductor device is embeddedin the paper; for packaging made of an organic resin, the semiconductordevice is embedded in the organic resin; the semiconductor device isaffixed to each article. The semiconductor device of the presentinvention is one by which a small, thin, and lightweight semiconductordevice is realized; therefore, even after the semiconductor device hasbeen affixed to an article, the design characteristics of the articleitself are not affected. In addition, by provision of the semiconductordevice obtained by use of the present invention in paper money, coins,securities, unregistered bonds, certificates, and the like, anauthentication function can be provided; if this authentication functionis utilized, forgery can be prevented. Furthermore, by provision of thesemiconductor device obtained by use of the present invention inpackaging containers, storage media, personal belongings, food products,clothing, household goods, electronic devices, and the like, improvementin the efficiency of systems, such as inspection systems and the like,can be realized.

Next, one embodiment of an electronic device in which the semiconductordevice obtained by use of the present invention is implemented will beexplained with reference to diagrams. The example of an electronicdevice illustrated here is of a cellular telephone, which includeshousings 2700 and 2706, a panel 2701, a housing 2702, a printed circuitboard 2703, operation buttons 2704, and a battery 2705 (referring toFIG. 12B). The panel 2701 is implemented in the housing 2702 in such away that it can be inserted or removed freely, and the printed circuitboard 2703 is fitted to the housing 2702. The shape and dimensions ofthe housing 2702 are changed appropriately to conform to the shape anddimensions of the panel 2701 incorporated in the electronic device. Aplurality of packaged semiconductor devices is mounted on the printedcircuit board 2703, and out of the plurality of semiconductor devices,one can be used as a semiconductor device that is obtained by use of thepresent invention. The plurality of the semiconductor devices mounted onthe printed circuit board 2703 functions as any of the following: acontroller, a central processing unit (CPU), memory, a power supplycircuit, an audio processing circuit, a transmitter-receiver circuit, orthe like.

The panel 2701 is connected to the printed circuit board 2703 through aconnective film 2708. The panel 2701, the housing 2702, and the printedcircuit board 2703 are placed inside the housings 2700 and 2706 alongwith the operation buttons 2704 and the battery 2705. A pixel region2709 included in the panel 2701 is positioned in such a way that it isvisible through an aperture window provided in the housing 2700.

As described above, because a flexible substrate is used, thesemiconductor device obtained by use of the present invention has thecharacteristics of being small in size, thin, and lightweight; by theaforementioned characteristics, limited space inside the housings 2700and 2706 of the electronic device can be used effectively.

It is to be noted that the housings 2700 and 2706 indicate an example ofthe appearance and shape of a cellular telephone, but electronic devicesof the present embodiment mode can be changed into various modesdepending on the functions and intended use.

Embodiment Mode 5

Here, an example in which a semiconductor device that has asemiconductor element formed using an amorphous semiconductor film isfabricated will be described using FIGS. 4A to 4D. For semiconductorelements formed using amorphous semiconductor films, there are thin filmtransistors, diodes, resistive elements, and the like. Here, an examplewhere a photoelectric element that is formed by use of a diode is usedfor the semiconductor element that is formed by use of an amorphoussemiconductor film is shown.

As in Embodiment Mode 1, the molybdenum film 101 is formed over thesubstrate 100, the molybdenum oxide film 102 is formed over themolybdenum film 101, the nonmetal inorganic film 103 is formed over themolybdenum oxide film 102, and the organic compound film 104 is formedover the nonmetal inorganic film 103. A cross-sectional process diagramof what is obtained after processes up to this stage have been completedis shown in FIG. 4A.

Next, the inorganic insulating film 105 is formed over the organiccompound film 104, and first conductive layers 242 a to 242 c are formedover the inorganic insulating film 105. Then, photoelectric layers 243 ato 243 c are formed so that a part of each of the first conductivelayers 242 a to 242 c is exposed. Subsequently, second conductive layers244 a to 244 c are formed over the photoelectric layers 243 a to 243 cas well as over the exposed parts of the first conductive layers 242 ato 242 c. Here, a photoelectric element 241 a is made up of the firstconductive layer 242 a, the photoelectric layer 243 a, and the secondconductive layer 244 a. In addition, a photoelectric element 241 b ismade up of the first conductive layer 242 b, the photoelectric layer 243b, and the second conductive layer 244 b. Furthermore, a photoelectricelement 241 c is made up of the first conductive layer 242 c, thephotoelectric layer 243 c, and the second conductive layer 244 c. It isto be noted that, in order that the photoelectric elements 241 a to 241c be connected in series, the second conductive layer 244 a of thephotoelectric element 241 a is formed so as to come into contact withthe first conductive layer 242 b of the second photoelectric element 241b. Moreover, the second conductive layer 244 b of the photoelectricelement 241 b is formed so as to come into contact with the firstconductive layer 242 c of the third photoelectric element 241 c. Thesecond conductive layer 244 c of the photoelectric element 241 c isformed so as to come into contact with the first conductive layer of afourth photoelectric element.

When light is incident from the organic compound film 104 side, for thefirst conductive layers 242 a to 242 c, conductive layers that canachieve ohmic contact with the photoelectric layers 243 a to 243 c thatare formed of amorphous semiconductor films and that can transmit lightare used. Typically, ITO (an alloy of indium oxide and tin oxide), analloy of indium oxide and zinc oxide (In₂O₃—ZnO), zinc oxide (ZnO),indium tin oxide that contains silicon oxide, or the like can be used.Furthermore, the second conductive layers 244 a to 244 c are formed of ametal that can make ohmic contact with the photoelectric layers 243 a to243 c that are formed of amorphous semiconductor films. As typicalexamples, the second conductive layers 244 a to 244 c are formed fromone element selected from aluminum (Al), titanium (Ti), chromium (Cr),nickel (Ni), molybdenum (Mo), palladium (Pd), tantalum (Ta), tungsten(W), platinum (Pt), and gold (Au) or from an alloy material thatcontains one of these elements at a content of 50% or more.

On the other hand, when light is incident from the second conductivelayers 244 a to 244 c side, a metal that can make ohmic contact with thephotoelectric layers 243 a to 243 c that are formed of amorphoussemiconductor films is used for the first conductive layers 242 a to 242c, for the second conductive layers 244 a to 244 c, conductive layersthat can achieve ohmic contact with the photoelectric layers 243 a to243 c that are formed of amorphous semiconductor films and that cantransmit light are used.

The photoelectric layers 243 a to 243 c can each be formed of asemiconductor layer that has an amorphous semiconductor film. As typicalexamples of this kind of semiconductor layer, an amorphous siliconlayer, an amorphous silicon-germanium layer, and a silicon carbide layerand a PN junction layer and PEN junction layer of these layers can begiven. In the present embodiment mode, the photoelectric layers 243 a to243 c are formed of amorphous silicon that has a PIN junction.

A flexible substrate 245 may be attached to the second conductive layers244 a to 244 c using an adhesive 246.

Next, a stacked-layer body 247 that includes the nonmetal inorganic film103, the organic compound film 104, the photoelectric elements 241 a to241 c, and the flexible substrate 245 is separated from the substrate100. Because the molybdenum oxide film is brittle, separation of astacked-layer body from a substrate can be performed with relativelylittle force. It is to be noted that, after the stacked-layer body 247is separated from the substrate 100, the nonmetal inorganic film 103 maybe removed, as necessary.

It is to be noted that, when a plurality of semiconductor devices isincluded in the stacked-layer body 247 that includes the nonmetalinorganic film 103, the organic compound film 104, the photoelectricelements 241 a to 241 c, and the flexible substrate 245, thestacked-layer body may be divided up and the plurality of semiconductordevices cut apart. By this kind of step, a plurality of semiconductordevices 248 can be fabricated by a single separation step.

By the above steps, a thin semiconductor device that has flexibility canbe fabricated.

In addition, by combination of semiconductor devices fabricatedaccording to the present embodiment mode, a variety of electronicdevices can be fabricated. For the electronic devices, cellular phones;notebook computers; game machines; car navigation systems; portableaudio devices; portable AV devices; cameras such as digital cameras,film cameras, instant cameras, and the like; room air conditioners; carair conditioners; ventilation and air conditioning systems; electricpots; CRT projection TVs; lighting devices; lighting systems; and thelike can be given. Specific examples of these devices will be givenbelow.

The photoelectric element of the present embodiment mode is made tofunction as a light sensor, and the light sensor can be used as a sensorfor optimal adjustment of display luminance and the brightness of abacklight and for a battery saver in cellular phones, notebookcomputers, digital cameras, game machines, car navigation systems,portable audio devices, and the like. In addition, the photoelectricelement of the present embodiment mode is made to function as a solarcell, and the solar cell can be provided in these devices as a battery.Because these semiconductor devices are small in size and a high levelof integration can be achieved with these semiconductor devices,miniaturization of electronic devices can be achieved.

Moreover, the photoelectric element of the present embodiment mode ismade to function as a light sensor, and the light sensor can beimplemented in cellular phone key switches and portable AV devices as asensor for ON/OFF control of a backlight LED or a cold-cathode tube orfor a battery saver. By implementation of a light sensor in thesedevices, a switch can be turned OFF in brightly lit environments, andbattery consumption due to operations of buttons for a long time can bereduced. Because the semiconductor devices of the present invention aresmall in size and a high level of integration can be achieved with thesesemiconductor devices, miniaturization and reduction of powerconsumption of electronic devices can be achieved.

Furthermore, the photoelectric element of the present embodiment mode ismade to function as a light sensor, and the light sensor can beimplemented in a camera, such as a digital camera, a film camera, aninstant camera, or the like, as a sensor for flash control or aperturecontrol. In addition, the photoelectric element of the presentembodiment mode is made to function as a solar cell, and the solar cellcan be provided in these devices as a battery. Because thesesemiconductor devices are small in size and a high level of integrationcan be achieved with these semiconductor devices, miniaturization ofelectronic devices can be achieved.

In addition, the photoelectric element of the present embodiment mode ismade to function as a light sensor, and the light sensor can beimplemented in a room air conditioner, a car air conditioner, or aventilation and air conditioning system as a sensor used to controlairflow and temperature. Because the semiconductor devices of thepresent invention are small in size and a high level of integration canbe achieved with these semiconductor devices, miniaturization ofelectronic devices can be achieved. Conservation of electric power canbe achieved.

Furthermore, the photoelectric element of the present embodiment mode ismade to function as a light sensor, and the light sensor can beimplemented in an electric pot as a sensor used to control thetemperature at which what is inside the electric pot is kept warm. Bythe light sensor of the present embodiment mode, the temperature atwhich at which what is inside the electric pot is kept warm can be setlow after the lights in a room have been turned off. Moreover, becausethe light sensor is small and thin, the light sensor can be implementedin a given location, and, as a result, conservation of electric powercan be achieved.

In addition, the photoelectric element of the present embodiment mode ismade to function as a light sensor, and the light sensor can beimplemented in a display of a CRT projection TV as a sensor used forscan line position adjustment (alignment of RGB scan lines (digital autoconvergence)). Because the semiconductor devices of the presentinvention are small in size and a high level of integration can beachieved with these semiconductor devices, miniaturization of electronicdevices can be achieved and a sensor can be implemented in a givenregion. Furthermore, high-speed automatic control of a CRT projection TVbecomes possible.

In addition, the photoelectric element of the present embodiment mode ismade to function as a light sensor, and the light sensor can beimplemented in various types of household lighting equipment, outdoorlamps, streetlights, uninhabited public systems, stadiums, automobiles,calculators, and the like as a sensor used for ON/OFF control of varioustypes of lighting devices and lighting systems. By the sensor of thepresent invention, conservation of electric energy can be achieved.Moreover, by the photoelectric element of the present embodiment modebeing made to function as a solar cell and being provided in theseelectronic devices as a battery, the size of the battery can be thinned,and miniaturization of electronic devices can be achieved.

Embodiment Mode 6

Liquid crystal display devices and light-emitting devices obtained byuse of the present invention can be used in a variety of modules (activematrix liquid crystal modules and active matrix EL modules). That is,the present invention can be implemented in all electronic devices inwhich these modules are incorporated into a display portion.

For those kinds of electronic devices, cameras such as video cameras,digital cameras, and the like; displays that can be mounted on aperson's head (goggle-type displays); car navigation systems;projectors; car stereos; personal computers; portable informationterminals (mobile computers, cellular phones, electronic book readers,and the like); and the like can be given. Examples of these devices areshown in FIGS. 14A to 14C.

FIGS. 14A and 14B are each a diagram of a television device. Withdisplay panels, there are cases in which only a pixel portion is formedin the display panel and a scanning line side driver circuit and asignal line side driver circuit are mounted to the display panel by aTAB method; cases in which only a pixel portion is formed in the displaypanel and a scanning line driver circuit and a signal line drivercircuit are mounted to the display panel by a COG method; cases in whicha thin film transistor is formed, a pixel portion and a scanning linedriver circuit are formed over the same substrate, and a signal linedriver circuit is formed separately and mounted to the display panel asa driver IC; cases in which a pixel portion, a scanning line drivercircuit, and a signal line driver circuit are formed over the samesubstrate; and the like, but any kind of mode may be used.

For structures of other external circuits, on the input side of a videosignal, one structure is made up of a video signal amplifier circuitused to amplify video signals out of signals received by a tuner; avideo signal processing circuit used to convert signals output from thevideo signal amplifier circuit into color signals corresponding to eachcolor of red, green, and blue; a control circuit used to convert thosevideo signals into input specifications for a driver IC; and the like.The control circuit outputs signals to both the scanning line side andthe signal line side. When digital drive is used, the structure may beone in which a signal divider circuit is provided on the signal lineside and an input digital signal is divided into a plurality of signalsand supplied.

Of signals that are received by a tuner, audio signals are transmittedto an audio signal amplifier circuit, and the output thereof is suppliedto a speaker through an audio signal processing circuit. A controllercircuit receives receiving station (receiving frequency) information andinformation for control of volume from an input portion, and signals aresent out to the tuner and the audio signal processing circuit.

A television device can be completed by incorporation of a displaymodule into a chassis, as shown in each of FIGS. 14A and 14B. An objectincluding from a display panel to an FPC that is connected to thedisplay panel is also referred to as a display module. A display moduleis formed of a main screen 2003 and is also equipped with speakerportions 2009, operation switches, and the like as accessory equipment.As thus described, a television device can be completed.

As shown in FIG. 14A, a display panel 2002 using display elements isincorporated into a chassis 2001, and starting with reception of generaltelevision broadcast signals by a receiver 2005, communication ofinformation in one direction (from a transmitter to a receiver) or intwo directions (between a transmitter and a receiver or betweenreceivers) by connection to a wired or wireless communications networkvia a modem 2004 can be done, as well. Operations of the televisiondevice can be carried out using switches that are incorporated into thechassis or by a remote control device 2006 provided separately, and adisplay portion 2007 that displays information output to this remotecontrol device may be provided in the remote control device, as well.

Furthermore, in a television device, a structure, in which a subscreen2008, used to display channel number, volume, and the like and formedusing a second display panel in addition to the main screen 2003, may beadded, as well. In this structure, the main screen 2003 may be formed ofan EL display panel that has an excellent viewing angle, and thesubscreen may be formed of a liquid crystal display panel by whichdisplay at low power consumption is possible. In addition, in order togive priority to a shift toward lower power consumption, the structuremay be set to be one in which the main screen 2003 is formed of a liquidcrystal display panel, the subscreen is formed of an EL display panel,and the subscreen can be set to be turned on or off.

FIG. 14B is a diagram of a television device that has a large displayportion, for example, one that has a 20-inch to 80-inch display screen,and includes a chassis 2010, a keyboard 2012 used for operations, adisplay portion 2011, speaker portions 2013, and the like. The presentinvention is applied to fabrication of the display portion 2011. In thedisplay portion of FIG. 14B, because a flexible substrate that can becurved is used, the television device comes to be a curved televisiondevice. Because the shape of this kind of display device can be designedfreely, a television device that has a desired shape can bemanufactured.

By the present invention, because display devices can be formed by asimplified process, a reduction in costs can be achieved. Consequently,with a television device formed using the present invention, even atelevision device with a large display screen can be formed at low cost.

Needless to say, the present invention is not limited to being used intelevision devices, and starting with monitors for personal computers,the present invention can be applied to a variety of applications, suchas information display boards in railway stations, airports, and thelike; street-side advertisement display boards; and the like, as displaymedia that have a large area.

In addition, FIG. 14C is a diagram of a portable information terminal(electronic book reader) and includes a main body 3001, display portions3002 and 3003, a storage medium 3004, operation switches 3005, anantenna 3006, and the like. The separation method of the presentinvention can be applied to the display portions 3002 and 3003. By useof a flexible substrate, making the portable information terminalthinner and more lightweight can be achieved.

The present embodiment mode can be freely combined with any one ofEmbodiment Mode 1 through Embodiment Mode 3.

Embodiment Mode 7

In the present embodiment mode, an example in which an electrophoreticdisplay device is used for the display described in Embodiment Mode 6will be described. Typically, the electrophoretic display device appliesto the display portion 3002 or the display portion 3003 of a portableinformation terminal (electronic book reader) that is shown in FIG. 14C.

The electrophoretic display device (electrophoretic display) is alsoreferred to as electronic paper and has advantages in that it has thesame level of readability as regular paper, it has less powerconsumption than other display devices, and it can be set to have athin, light form.

With the electrophoretic display, various modes can be considered;however, electrophoretic displays are displays, which contain aplurality of microcapsules that each contains first particles that havepositive charge, second particles that have negative charge, and asolvent and in which the particles within the microcapsules are moved inopposite directions from each other by application of an electric fieldto the microcapsules and only the color of particles concentrated on oneside is displayed. It is to be noted that the first particles and thesecond particles each have a pigment and are particles that do not moveunless in the presence of an electric field. Moreover, the colors of thefirst particles and the second particles are set to be different (thisincludes particles that are colorless).

In this way, an electrophoretic display is a display that uses theso-called dielectrophoretic effect by which first particles or secondparticles that have a high dielectric constant move to a region in whichthere is a high electric field. With an electrophoretic display, thereis no need to use a polarizer or a counter substrate, which are requiredin a liquid crystal display device, and both the thickness and weight ofthe electrophoretic display device can be cut in half.

A substance in which the aforementioned microcapsules are diffusedthroughout a solvent is referred to as electronic ink. This electronicink can be printed over the surface of glass, plastic, cloth, paper, andthe like. Furthermore, by use of a color filter or particles that have apigment, color display is possible, as well.

In addition, if a plurality of the aforementioned microcapsules arearranged, as appropriate, over a substrate so as to be interposedbetween a pair of electrodes, a display device can be completed, anddisplay can be performed with application of an electric field to themicrocapsules. For example, the active matrix substrate obtained withEmbodiment Mode 1 or Embodiment Mode 2 can be used. Although electronicink can be printed directly onto a plastic substrate, when the displaydevice is an active matrix type of device, it is preferable thatelements and electronic ink be formed over a glass substrate, ratherthan elements being formed over a plastic substrate that is easilyaffected by heat and degraded by organic solvents, and separated fromthe glass substrate according to the separation method of EmbodimentMode 1 or Embodiment Mode 2.

It is to be noted that the first particles and the second particles inthe microcapsules may each be formed of a single type of materialselected from a conductive material, an insulating material, asemiconductor material, a magnetic material, a liquid crystal material,a ferroelectric material, an electroluminescent material, anelectrochromic material, and a magnetophoretic material or formed of acomposite material of any of these.

The present embodiment mode can be freely combined with any one ofEmbodiment Mode 1, Embodiment Mode 2, or Embodiment Mode 6.

Embodiment 1

In the present embodiment, changes in the current-voltagecharacteristics of a thin film transistor, which is one example of asemiconductor element, observed before and after performance of theseparation process of the present invention, are shown.

A manufacturing process of a thin film transistor of the presentembodiment will be given using FIGS. 16A to 16F.

As shown in FIG. 16A, the molybdenum film 101 is formed over thesubstrate 100, the molybdenum oxide film 102 is formed over themolybdenum film 101, the nonmetal inorganic film 103 is formed over themolybdenum oxide film 102, the organic compound film 104 is formed overthe nonmetal inorganic film 103, the inorganic insulating film 105 isformed over the organic compound film 104, and a first conductive film151 is formed over the inorganic insulating film 105.

Here, a glass substrate manufactured by Corning Incorporated was usedfor the substrate 100.

Furthermore, for the molybdenum film 101, a molybdenum film was formedat a thickness of 50 nm by a sputtering method. Here, a molybdenumtarget was used, an argon gas with a flow rate of 30 sccm was used for asputtering gas, the pressure of the reaction chamber that was used wasset to 0.4 Pa, and the power of the power supply that was used was setto 1.5 kW.

In addition, the chamber of a plasma CVD device was filled with an N₂Ogas, a plasma was generated, and the surface of the molybdenum film 101was oxidized to form the molybdenum oxide film 102.

Moreover, for the nonmetal inorganic film 103, a silicon oxynitride filmwas formed at a thickness of 100 nm by a plasma CVD method. Here, SiH₄with a flow rate of 100 sccm and N₂O with a flow rate of 1000 sccm wereused as source gases, the pressure of the reaction chamber that was usedwas set to 80 Pa, the power of the power supply that was used was set to300 kW, and the temperature for film formation was set to 280° C. It isto be noted that the power supply frequency was 13.56 MHz, the distancebetween electrodes was 24.5 mm, and the size of the electrodes was 60.3cm×49.3 cm=2972.8 cm².

In addition, for the organic compound film 104, polyimide was formed ata thickness of 15 μm by application of a composition by a spin coatingmethod, heating of the composition at a temperature of 80° C. for 5minutes, and heating at a temperature of 300° C. for 30 minutes.

Furthermore, for the inorganic insulating film 105, by a plasma CVDmethod, a silicon nitride oxide film was formed at a thickness of 50 nm,and after that, a silicon oxynitride film was formed at a thickness of100 nm. Here, SiH₄ with a flow rate of 15 sccm, H₂ with a flow rate of1200 sccm, NH₃ with a flow rate of 150 sccm, and N₂O with a flow rate of20 sccm were used as source gases; the pressure of the reaction chamberthat was used was set to 40 Pa; the power of the power supply that wasused was set to 250 kW; and the temperature for film formation was setto 280° C. It is to be noted that the power supply frequency was 13.56MHz, the distance between electrodes was 24.5 mm, and the size of theelectrodes was 60.3 cm×49.3 cm=2972.8 cm².

For the first conductive film 151, a molybdenum film was formed at athickness of 100 nm, under the same conditions by which the molybdenumfilm 101 was formed.

Next, after surface modifying treatment was performed on the firstconductive film 151, a film (not shown in the diagram) that repelsliquids was formed and irradiated with UV light, and after that, a firstmask 152 was formed.

Here, because a film that repels liquids had not been formed on thesurface of the first conductive film 151, the surface of the firstconductive film 151 was treated with hydrogen peroxide for a shortamount of time, and surface modifying treatment was performed on thefirst conductive film 151. Furthermore, the film that repels liquids wasformed in order to control the shape of the first mask 152. With thesurface tension of the surface of the film that repels liquids beinghigh, the wettability of the surface of the film that repels liquids bya composition extruded over is low, and because there was a risk thatthe first mask would be segmented and not form into the shape desired,the film that repels liquids was irradiated with UV light, and thesurface tension of the film that repels liquids was controlled. Here,heptadecafluorodecyltrimethoxysilane was deposited at 170° C. for 10minutes, and a film that repels liquids was formed by adsorption of theheptadecafluorodecyltrimethoxysilane by the surface of the firstconductive film.

The first mask 152 was formed of a novolac resin where a composition wasdischarged by an inkjet printing method and heated at 120° C. for 3minutes.

Next, parts of the first conductive film 151 that are not covered by thefirst mask 152 were etched, and a gate electrode 161 shown in FIG. 16Bwas formed. After formation of the gate electrode 161, the first mask152 was removed.

Here, the first conductive film 151 was etched by dry etching with CF₄with a flow rate of 50 sccm and O₂ with a flow rate of 45 sccm used asetching gases, the pressure of the reaction chamber that was used set to13.33 Pa, and the power of the power supply that was used set to 500 W.

Next, a gate insulating film 162 was formed over the inorganicinsulating film 105 and the gate electrode 161, an amorphoussemiconductor film 163 was formed over the gate insulating film 162, andan n-type semiconductor film 164 was formed over the amorphoussemiconductor film 163.

For the gate insulating film 162, a silicon nitride film was formed at athickness of 300 nm by a plasma CVD method. For the amorphoussemiconductor film 163, an amorphous silicon film was formed at athickness of 150 nm by a plasma CVD method. For the n-type semiconductorfilm 164, an n-type amorphous silicon film was formed at a thickness of50 nm by a plasma CVD method.

Here, for film formation conditions for the silicon nitride film thatwas formed for the gate insulating film 162, SiH₄ with a flow rate of 40sccm, H₂ with a flow rate of 500 sccm, NH₃ with a flow rate of 550 sccm,and N₂O with a flow rate of 140 sccm were used as source gases; thepressure of the reaction chamber that was used was set to 100 Pa; andthe power of the power supply that was used was set to 370 kW.Furthermore, for film formation conditions for the amorphous siliconfilm that was formed for the amorphous semiconductor film 163, SiH₄ witha flow rate of 280 sccm and H₂ with a flow rate of 300 sccm were used assource gases, the pressure of the reaction chamber that was used was setto 170 Pa; and the power of the power supply that was used was set to 60kW. In addition, for film formation conditions for the n-type amorphoussilicon film that was formed for the n-type semiconductor film 164, SiH₄with a flow rate of 100 sccm and 0.5% PH₃ (hydrogen dilution) with aflow rate of 170 sccm were used as source gases, the pressure of thereaction chamber that was used was set to 170 Pa; and the power of thepower supply that was used was set to 60 kW. It is to be noted that, forfilm formation of these films, the temperature for film formation wasset to 280° C., the power supply frequency was 13.56 MHz, the distancebetween electrodes was 24.5 mm, and the size of the electrodes was 60.3cm×49.3 cm=2972.8 cm².

Next, after a film (not shown in the diagram) that repels liquids wasformed over the surface of the n-type semiconductor film 164, a secondmask 165 was formed. It is to be noted that surface modifying treatmentfor the n-type semiconductor film 164, formation of the film that repelsliquids, and irradiation of the film that repels liquids with UV lightare the same as those used for formation pretreatment on the firstconductive film 151 before the first mask 152 is formed.

The second mask 165 was formed of a novolac resin where a compositionwas discharged by an inkjet printing method and heated at 120° C. for 3minutes.

Next, the n-type semiconductor film 164 was etched using the second mask165, and an n-type semiconductor layer 172 that is shown in FIG. 16C wasformed. The amorphous semiconductor film 163 was etched using the secondmask 165, and an amorphous semiconductor layer 171 was formed.

Here, the amorphous semiconductor film 163 and the n-type semiconductorfilm 164 were etched by dry etching with Cl₂ with a flow rate of 60 sccmand CF₄ with a flow rate of 10 sccm used as etching gases, the pressureof the reaction chamber that was used set to 13.3 Pa, and the power ofthe power supply that was used set to 750 W. After dry etching wasperformed, the second mask 165 was removed.

Next, a third mask that is not shown in the diagram was formed over thegate insulating film 162, part of the gate insulating film 162 wasetched, and a contact hole exposing part of the gate electrode 161 wasformed. After the contact hole was formed, the third mask was removed.

Here, the gate insulating film 162 was etched by dry etching with CHF₃with a flow rate of 35 sccm used as an etching gas, the pressure of thereaction chamber that was used set to 3.33 Pa, and the power of thepower supply that was used set to 1000 W.

Next, a second conductive film 173 was formed over exposed parts of thegate electrode 161, the gate insulating film 162, the amorphoussemiconductor layer 171, and the n-type semiconductor layer 172. Then,although not shown in the diagram, after surface modifying treatment wasperformed on the second conductive film 173, a film that repels liquidswas formed. After the surface of the film that repels liquids wasirradiated with UV light, fourth masks 174 and 175 were formed. It is tobe noted that surface modifying treatment for the second conductive film173, formation of the film that repels liquids, and irradiation of thefilm that repels liquids with UV light are the same as those used forformation pretreatment on the first conductive film 151 before the firstmask 152 is formed.

Here, for the second conductive film 173, a molybdenum film was formedat a thickness of 200 nm by the same conditions as were used information of the first conductive film 151. Furthermore, the fourthmasks 174 and 175 were formed of a novolac resin by the same conditionsas were used in formation of the first mask 152.

Next, the second conductive film 173 was etched using the fourth masks174 and 175, and a source electrode and a drain electrode 181 and 182shown in FIG. 16D were formed. In addition, although not shown in thediagram, a connecting wiring connected to the gate electrode 161 wasformed.

Here, the second conductive film 173 was etched by wet etching using amixed solution of phosphoric acid, acetic acid, and nitric acid. Afterthe second conductive film 173 was etched, the fourth masks 174 and 175were removed.

Next, the n-type semiconductor layer 172 was etched using the sourceelectrode and drain electrode 181 and 182 as masks, and a source regionand a drain region 183 and 184 were formed. At this time, the amorphoussemiconductor layer 171 was also etched somewhat. The amorphoussemiconductor layer at this time is defined as an amorphoussemiconductor layer 185.

Next, a third insulating film 186 was formed over exposed parts of thegate insulating film 162, the source electrode and drain electrode 181and 182, and the amorphous semiconductor layer 185. The third insulatingfilm 186 functions as a passivation film.

Here, for the third insulating film 186, a silicon nitride film wasformed at a thickness of 200 nm by the same conditions as were used information of the gate insulating film 162.

Next, after fifth masks 187 to 189 were formed over the third insulatingfilm 186, the third insulating film 186 was etched, and along with aninsulating layer 191 being formed, parts of each of the source electrodeand drain electrode 181 and 182 and the connecting wiring connected tothe gate electrode were exposed. Measurements of current-voltagecharacteristics of a thin film transistor fabricated by the steps givenabove can be taken. After the third insulating film 186 was etched, thefifth masks 187 to 189 were removed.

Here, by conditions that were the same as those used when the contacthole was formed in the gate insulating film, the third insulating film186 was etched by dry etching.

Next, heat treatment was performed to improve the current-voltagecharacteristics of a thin film transistor. Here, heating was performedat 250° C. for 12 minutes. Off current (I_(off)) can be reduced withthis heating step. By the above steps, a thin film transistor 192 wasfabricated.

Here, current-voltage characteristics of the thin film transistor 192were measured. These measurement results are shown in FIG. 17A.

Next, after reinforcing tape was attached to an edge of a substrate andincisions were inserted from the tape side to the substrate 100, asshown in FIG. 16F, the nonmetal inorganic film 103 was separated fromthe substrate 100. Here, a diagram in which disjointing occurred at themolybdenum oxide film 102 and the nonmetal inorganic film 103 wasseparated from the substrate 100 is shown.

Next, results for measurements of current-voltage characteristics of thethin film transistor 192 that was separated from the substrate 100 areshown in FIG. 17B.

In addition, the measurement results of FIGS. 17A and 17B are given inTable 1. It is to be noted that the channel length of the thin filmtransistor that was measured was 50 μm and the channel width was 170 μm.

TABLE 1 Before separation After separation Subthreshold swing (V/dec)0.59 0.56 V_(th) (V) 5.39 5.28 μFE (cm²/(V · s)) 0.66 0.61 On/off ratio(V_(d) = 1 V) 7.54 × 10⁵ 6.50 × 10⁵ On/off ratio (F_(d) = 14 V) 1.72 ×10⁶ 1.97 × 10⁶

From FIGS. 17A and 17B, it can be seen that there is almost no change inthe current-voltage characteristics and mobility of the thin filmtransistor from before and after separation.

From what is described above, it can be seen that a semiconductor devicethat is flexible can be fabricated while degradation of characteristicsof a thin film transistor formed over a substrate is avoided.

This application is based on Japanese Patent Application serial no.2007-023747 filed with the Japan Patent Office on Feb. 2, 2007, theentire contents of which are hereby incorporated by reference.

1. (canceled)
 2. A method for manufacturing a semiconductor device, themethod comprising the steps of: forming a metal film over a substrate;forming a metal oxide film over the metal film; forming a nonmetalinorganic film over the metal oxide film; forming an organic compoundfilm over the nonmetal inorganic film; forming a transistor over theorganic compound film; forming an interlayer insulating film over thetransistor; forming a first electrode over the interlayer insulatingfilm; forming a light-emitting layer over the first electrode; forming asecond electrode over the light-emitting layer; forming a protectivefilm over the second electrode; and separating a stacked-body comprisingthe organic compound film, the transistor, the interlayer insulatingfilm, the first electrode, the light-emitting layer, the secondelectrode, and the protective film from the substrate, wherein thetransistor comprises a semiconductor layer, and wherein thesemiconductor layer comprises indium, zinc, and oxygen.
 3. The methodaccording to claim 2, wherein the semiconductor layer comprises gallium.4. The method according to claim 2, wherein the transistor comprises agate electrode over the semiconductor layer.
 5. The method according toclaim 2, wherein the transistor comprises a gate electrode below thesemiconductor layer.
 6. The method according to claim 2, wherein thestacked-body comprises the nonmetal inorganic film.
 7. The methodaccording to claim 2, wherein the transistor comprises a sourceelectrode and a drain electrode below the semiconductor layer.
 8. Themethod according to claim 2, wherein the first electrode is formed onand in contact with the interlayer insulating film and the transistor.9. The method according to claim 2, wherein the transistor comprises agate insulating film comprising aluminum or titanium.
 10. A method formanufacturing a semiconductor device, the method comprising the stepsof: forming a metal film over a substrate; forming a metal oxide filmover the metal film; forming a nonmetal inorganic film over the metaloxide film; forming an organic compound film over the nonmetal inorganicfilm; forming a transistor over the organic compound film; forming aninterlayer insulating film over the transistor; forming a firstelectrode over the interlayer insulating film; forming a light-emittinglayer over the first electrode; forming a second electrode over thelight-emitting layer; forming a protective film over the secondelectrode; affixing a flexible substrate over the protective film by anadhesive layer; and separating a stacked-body comprising the organiccompound film, the transistor, the interlayer insulating film, the firstelectrode, the light-emitting layer, the second electrode, and theprotective film from the substrate, wherein the transistor comprises asemiconductor layer, and wherein the semiconductor layer comprisesindium, zinc, and oxygen.
 11. The method according to claim 10, whereinthe semiconductor layer comprises gallium.
 12. The method according toclaim 10, wherein the transistor comprises a gate electrode over thesemiconductor layer.
 13. The method according to claim 10, wherein thetransistor comprises a gate electrode below the semiconductor layer. 14.The method according to claim 10, wherein the stacked-body is separatedfrom the substrate after the flexible substrate is affixed.
 15. Themethod according to claim 10, wherein the stacked-body comprises thenonmetal inorganic film.
 16. The method according to claim 10, whereinthe transistor comprises a source electrode and a drain electrode belowthe semiconductor layer.
 17. The method according to claim 10, whereinthe first electrode is formed on and in contact with the interlayerinsulating film and the transistor.
 18. The method according to claim10, wherein the transistor comprises a gate insulating film comprisingaluminum or titanium.
 19. A method for manufacturing a semiconductordevice, the method comprising the steps of: forming a molybdenum filmover a substrate; forming a molybdenum oxide film over the molybdenumfilm; forming a nonmetal inorganic film over the molybdenum oxide film;forming an organic compound film over the nonmetal inorganic film;forming a transistor over the organic compound film; forming aninterlayer insulating film over the transistor; forming a firstelectrode over the interlayer insulating film; forming a light-emittinglayer over the first electrode; forming a second electrode over thelight-emitting layer; forming a protective film over the secondelectrode; and separating a stacked-body comprising the organic compoundfilm, the transistor, the interlayer insulating film, the firstelectrode, the light-emitting layer, the second electrode, and theprotective film from the substrate, wherein the transistor comprises asemiconductor layer, and wherein the semiconductor layer comprisesindium, zinc, and oxygen.
 20. The method according to claim 19, whereinthe semiconductor layer comprises gallium.
 21. The method according toclaim 19, wherein the transistor comprises a gate electrode over thesemiconductor layer.
 22. The method according to claim 19, wherein thetransistor comprises a gate electrode below the semiconductor layer. 23.The method according to claim 19, comprising the step of affixing aflexible substrate over the protective film by an adhesive layer. 24.The method according to claim 23, wherein the stacked-body is separatedfrom the substrate after the flexible substrate is affixed.
 25. Themethod according to claim 19, wherein the stacked-body comprises thenonmetal inorganic film.
 26. The method according to claim 19, whereinthe transistor comprises a source electrode and a drain electrode belowthe semiconductor layer.
 27. The method according to claim 19, whereinthe first electrode is formed on and in contact with the interlayerinsulating film and the transistor.
 28. The method according to claim19, wherein the transistor comprises a gate insulating film comprisingaluminum or titanium.